DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA610TA
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The
µ
PA610TA is a switching device which can be driven
directly by a 2.5 V power source.
The
µ
PA610TA has excellent switching characteristics, and is
2.8 ±0.2
Package Drawings (unit: mm)
0.65
+0.1
–0.15
0.32
+0.1
–0.05
0.16
+0.1
–0.06
suitable for use as a high-speed switching device in digital circuits.
1.5
0 to 0.1
FEATURES
• Can be driven by a 2.5 V power source.
• Low Gate Cut-off Voltage.
0.95 0.95
1.9
2.9 ±0.2
0.8
1.1 to 1.4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–30
+20
+0.1
+0.4
Note
300 (TOTAL)
150
–55 to +150
V
V
A
A
mW
°C
°C
Gate
Equivalent Circuit
Drain
Internal Diode
Note
PW
≤
10
µ
s, Duty Cycle
≤
1 %
Gate Protect
Diode
Source
Pin Connection (Top View)
6
5
4
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
6. Drain 1
1
2
3
Marking : JB
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. D11199EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
©
1996
µ
PA610TA
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-State
Resistance
Drain to Source On-State
Resistance
Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
–1.0
20
23
60
–1.4
MIN.
TYP.
MAX.
–1
+10
–1.7
UNIT
TEST CONDITIONS
V
DS
= –30 V, V
GS
= 0
V
GS
= +20 V, V
DS
= 0
V
DS
= –3 V, I
D
= –10
µ
A
V
DS
= –3 V, I
D
= –10 mA
V
GS
= –2.5 V, I
D
= –1 mA
µ
A
µ
A
V
mS
Ω
Ω
Ω
R
DS(on)2
11
23
V
GS
= –4 V, I
D
= –10 mA
R
DS(on)3
6
13
V
GS
= –10 V, I
D
= –10 mA
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5
15
1.3
140
330
220
320
pF
pF
pF
ns
ns
ns
ns
V
DS
= –3 V
V
GS
= 0
f = 1 MHz
V
DD
= –3 V, I
D
= –10 mA
V
GS(on)
= –4 V, R
G
= 10
Ω
R
L
= 300
Ω
2
µ
PA610TA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
–100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT - Derating Factor - %
I
D
- Drain Current - mA
80
–80
V
GS
= –
10 V
V
GS
= –
6 V
V
GS
= –
4 V
V
GS
= –
3 V
60
–60
40
–40
20
–20
V
GS
= –
2.5 V
0
0
30
60
90
120
T
A -
Ambient Temperature - ˚C
150
0
0
–1
–2
–3
–4
V
DS
- Drain to Source Voltage - V
–5
TRANSFER CHARACTERISTICS
–100
Iy
fs
I - Forward Transfer Admittance - mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
V
DS
= –
3 V
V
DS
= –
3 V
–10
I
D
- Drain Current - mA
T
A
=
125 °C
–1
T
A
=
75 °C
T
A
=
25 °C
–0.1
T
A
= –
25 °C
100
T
A
= –
25 °C
T
A
=
25 °C
10
T
A
=
75 °C
T
A
=
125 °C
1
–0.1
–0.01
–0.001
0
–0.8
–1.6
–2.4
–3.2
–4.0
–1
–10
–100
–1000
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
R
DS(on)
- Drain to Source On-State Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON–STATE RESISTANCE vs.
DRAIN CURRENT
60
50
40
30
20
T
A =
25 °C
10
0
–0.1
T
A = –
25 °C
T
A
=
125 °C
T
A
=
75 °C
V
GS
= –
2.5 V
DRAIN TO SOURCE ON–STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS
= –
4 V
50
40
30
20
10
0
–0.1
T
A
=
25 °C
T
A
= –
25 °C
–1
–10
–100
I
D
- Drain Current - mA
–1000
T
A
=
125 °C
T
A
=
75 °C
–1
–10
–100
I
D
- Drain Current - mA
–1000
3
µ
PA610TA
R
DS(on)
- Drain to Source On-Stage Resistance -
Ω
R
DS(on) -
Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON–STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS =
–10 V
50
40
30
20
10
0
–0.1
T
A
=
25 °C
T
A
=
–25 °C
T
A
=
75 °C
T
A
=
125 °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
50
I
D
=
–1 mA
40
30
20
10
0
0
–2
–4
–6
–8
V
GS
- Gate to Source Voltage - V
–10
I
D
=
–10 mA
I
D
=
–100 mA
–1
–10
–100
I
D
- Drain Current - mA
–1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
C
iss
,C
oss
,C
rss
- Capacitance - pF
t
d(on)
,t
r
,t
d(off)
,t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
1000
t
r
t
f
t
d(on)
100
t
d(off)
V
GS =
0
f = 1 MHz
C
oss
10
C
iss
C
rss
1
–1
–10
V
DS
- Drain to Source Voltage - V
–100
10
–10
V
DD
=
–3 V
V
GS(on)
=
–4 V
R
in
=
10
Ω
–100
I
D
- Drain Current - mA
–1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1000
I
D
-
Reverse Drain Current - mA
–100
–10
–1
–0.1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
V
SD
- Source to Drain Voltage - V
4
µ
PA610TA
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
Document No.
TEI-1202
C11531E
C10535E
MEI-1202
X10679E
5
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