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CD9011G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size85KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
Download Datasheet Parametric Compare View All

CD9011G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN

CD9011G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
ConfigurationSINGLE
Minimum DC current gain (hFE)72
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
CD9011
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
Tj, Tstg
VALUE
30
50
5.0
100
400
-55 to +125
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
VCEO
IC=10mA, IB=0
30
Collector -Emitter Voltage
VCBO
IC=100uA, IE=0
50
Collector -Base Voltage
VEBO
IE=10uA, IC=0
5.0
Emitter Base Voltage
ICBO
VCB=18V, IE=0
-
Collector Cut off Current
IEBO
VEB=3V, IC=0
-
Emitter Cut off Current
hFE
IC=1mA,VCE=5V
29
DC Current Gain
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=10mA,IB=1mA
Dynamic Characteristics
Cob
VCB=10V,f=1MHz
-
Output Capacitance
ft
VCE=10V, IC=10mA,
250
Transition Frequency
f=100MHz
NF
VCE=5V, IC=100uA
-
Noise Figure
f=1KHz
hFE CLASSIFICATION
D 29-44, E 40-59, F 54-80, G 72-108,
J 182-273
TYP
-
-
-
-
-
-
-
-
-
-
H 97-146,
MAX
-
-
-
50
100
273
0.30
3.5
-
4.0
I 132-198,
UNIT
V
V
V
nA
nA
V
pF
MHz
dB
Continental Device India Limited
Data Sheet
Page 1 of 3

CD9011G Related Products

CD9011G CD9011J CD9011E CD9011D CD9011H
Description Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 72 182 40 29 97
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
Base Number Matches - 1 1 1 -

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