BL
FEATURES
GALAXY ELECTRICAL
MUR170 --- MUR1100
VOLTAGE RANGE: 700---1000 V
CURRENT: 1.0 A
HIGH EFFICIENCY RECT IFIER
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
DO - 41
MECHANICAL DATA
Cas e: JEDEC DO-41, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces , 0.34gram s
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MUR170
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
MUR180
800
560
800
1.0
MUR190
900
630
900
MUR1100
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
700
490
700
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous f orw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
I
FSM
V
F
I
R
trr
C
J
R
θ
JA
T
J
T
STG
30.0
A
1.7
10.0
100.0
75
15
60
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1.Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
(Note1)
(Note2)
(Note3)
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance from junction to ambient.
www.galaxycn.com
Document Number 0262021
BL
GALAXY ELECTRICAL
1
.
RATINGS AND CHARACTERISTIC CURVES
MUR170 --- MUR1100
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t
rr
50
N 1.
10
N 1.
+0.5A
0
PULSE
GENERATOR
(NOTE2)
D.U.T.
(+)
25VDC
(approx)
(-)
1
NONIN-
DUCTIVE
-0.25A
OSCILLOSCOPE
(NOTE1)
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIMEBASEFOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.3 -- FORWARD DERATING CURVE
10
1.0
1.0
0.8
T
J
=25
Pulse Width=300
µ
S
0.1
AMPERES
0.6
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.4
0.01
0.2
0
0
0.001
0
25
50
75
100
125
150
175
0.2
0.4 0.6 0.8 1
1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
Z
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.5--TYPICAL JUNCTION CAPACITANCE
50
40
30
JUNCTION CAPACITANCE,pF
200
100
60
40
20
10
6
4
T
J
=25
T
J
=125
8.3ms Single Half
Sine-Wave
20
10
0
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
BL
GALAXY ELECTRICAL
Document Number 0262021
www.galaxycn.com
2
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DSP and ARM Processors
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