DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2730TP
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2730TP which has a heat spreader is P-Channel
MOS Field Effect Transistor designed for power management
applications of notebook computers and Li-ion battery
protection circuit.
1.49 ±0.21
1.44 TYP.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
FEATURES
•
Low on-state resistance
R
DS(on)1
= 7.0 mΩ MAX. (V
GS
= –10 V, I
D
= –7.5 A)
R
DS(on)2
= 10.5 mΩ MAX. (V
GS
= –4.5 V, I
D
= –7.5 A)
R
DS(on)3
= 12.0 mΩ MAX. (V
GS
= –4.0 V, I
D
= –7.5 A)
•
Low C
iss
: C
iss
= 4670 pF TYP.
•
Small and surface mount package (Power HSOP8)
1
5.2
+0.17
–0.2
4
0.8 ±0.2
S
+0.10
–0.05
6.0 ±0.3
4.4 ±0.15
0.05 ±0.05
0.15
1.27 TYP.
0.40
1
+0.10
–0.05
0.10 S
0.12 M
1.1 ±0.2
4
2.9 MAX.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
8
2.0 ±0.2
9
4.1 MAX.
µ
PA2730TP
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Note1
Drain Current (DC)
Note2
Drain Current (pulse)
Total Power Dissipation (T
C
= 25°C)
Note1
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Note3
Single Avalanche Current
Note3
Single Avalanche Energy
V
DSS
V
GSS
I
D(DC)1
I
D(DC)2
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
−30
m20
m42
m20
m120
40
3
150
−55
to + 150
−15
22.5
V
V
A
A
A
W
W
°C
°C
A
mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Notes 1.
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= –15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= –20
→
0 V
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No.
G15983EJ1V0DS00 (1st edition)
Date Published November 2002 NS CP(K)
Printed in Japan
2002
µ
PA2730TP
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
–
24 V
V
GS
=
–
10 V
I
D
= 15 A
I
F
= 15 A, V
GS
= 0 V
I
F
= 15 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
=
–
30 V, V
GS
= 0 V
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
–
10 V, I
D
=
–
1 mA
V
DS
=
–
10 V, I
D
=
–
7.5 A
V
GS
=
–
10 V, I
D
=
–
7.5 A
V
GS
=
–
4.5 V, I
D
=
–
7.5 A
V
GS
=
–
4.0 V, I
D
=
–
7.5 A
V
DS
=
–
10 V
V
GS
= 0 V
f = 1 MHz
V
DD
=
–
15 V, I
D
=
–
7.5 A
V
GS
=
–
10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
UNIT
–
1
m
100
–
1.0
14
30
5.7
7.7
8.8
4670
1220
760
20
28
190
110
97
10
32
0.81
65
62
7.0
10.5
12.0
µ
A
nA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
–
2.5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−20 →
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS(−)
R
L
V
DD
V
DS(−)
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS(−)
0
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G15983EJ1V0DS
µ
PA2730TP
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
4
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - W
Mounted on a glass epoxy board
(1 inch × 1 inch × 0.8 mm)
T
A
= 25°C , PW = 10 s , Single pulse
100
80
60
40
20
0
0
25
50
75
100
125
150
175
3.5
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
- 1000
R
DS(on)
Limited
(at V
GS
=
−10
V)
I
D(pulse)
I
D
- Drain Current - A
- 100
I
D(DC)
PW =
100
µs
- 10
-1
- 0.1
1 ms
10 ms
Power Dissipation
Limited
Mounted on a glass epoxy board
(1 inch ×1 inch × 0.8 m m)
T
A
= 25°C , Single pulse
100 ms
10 s
- 0.01
- 0.1
-1
- 10
- 100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
Single pulse
R
th(ch-A)
= 89.3°C/W
100
10
R
th(ch-C)
= 3.13°C/W
1
0.1
Remark r
th(ch-A)
: Mounted on a glass epoxy board
(1 inch × 1 inch × 0.8 mm) , T
A
= 25°C
r
th(ch-C)
: T
C
= 25°C
0.01
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15983EJ1V0DS
3
µ
PA2730TP
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 120
- 100
V
GS
=
−10
V
−4.5
V
−4.0
V
- 80
- 60
- 40
- 20
Pulsed
0
0
-1
-2
-3
FORWARD TRANSFER CHARACTERISTICS
- 1000
I
D
- Drain Current - A
I
D
- Drain Current - A
- 100
T
ch
= 150°C
75°C
25°C
−55°C
- 10
-1
- 0.1
Pulsed
V
D S
=
−10
V
- 0.01
0
-1
-2
-3
-4
-5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
T
ch
=
−55°C
25°C
75°C
150°C
V
GS(off)
- Gate Cut-off Voltage - V
- 2.5
-2
- 1.5
-1
- 0.5
0
-50
0
50
-
V
D S
=
−10
V
I
D
=
−1
m A
10
1
Pulsed
V
DS
=
−10
V
0.1
- 0.1
-1
- 10
- 100
100
150
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
I
D
=
−7.5
A
Pulsed
15
V
GS
=
−4.0
V
−4.5
V
−10
V
15
10
10
5
5
0
- 0.1
0
0
-5
- 10
- 15
- 20
-1
- 10
- 100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet G15983EJ1V0DS
µ
PA2730TP
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
I
D
=
−7.5
A
Pulsed
V
GS
= -4.0 V
−4.5
V
10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C
is s
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
oss
1000
C
rs s
−10
V
5
100
V
GS
= 0 V
f = 1 MHz
10
- 0 .0 1
- 0 .1
-1
- 10
- 100
0
-50
0
50
100
150
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-3 0
-1 5
V
DS
V
DS
- Drain to Source Voltage - V
t
d(off)
100
t
f
t
r
-2 0
V
D D
=
−24
V
−15
V
−
6 V
-1 0
10
t
d(on)
V
D D
=
−15
V
V
G S
=
−10
V
R
G
= 10
Ω
-1 0
V
GS
-5
1
- 0.1
0
-1
- 10
- 100
0
20
40
60
80
10 0
0
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
V
G S
=
−10
V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
V
GS
= 0 V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
0V
10
100
1
10
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forword Current - A
Data Sheet G15983EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
Motor Drive Control（Motor Control）
京公网安备 11010802033920号
EEWORLD
