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UPA2718GR

Description
SWITCHING P-CHANNEL POWER MOSFET
File Size128KB,7 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet View All

UPA2718GR Overview

SWITCHING P-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2718GR
SWITCHING
P-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8 : Drain
DESCRIPTION
The
µ
PA2718GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Low on-state resistance
R
DS(on)1
= 9.0 mΩ MAX. (V
GS
=
−10
V, I
D
=
−6.5
A)
R
DS(on)2
= 14.5 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−6.5
A)
Low C
iss
: C
iss
= 2810 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
6.0 ±0.3
4.4
+0.10
–0.05
1
1.44
4
5.37 MAX.
0.8
1.8 MAX.
0.15
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
µ
PA2718GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–30
m20
m13
m130
2
2
150
–55 to +150
−13
16.9
V
V
A
A
W
W
°C
°C
A
mJ
Gate
Gate
Protection
Diode
Body
Diode
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1.
2.
3.
4.
Note4
Note4
I
AS
E
AS
Source
PW
10
µ
s, Duty Cycle
1%
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
Starting T
ch
= 25°C, V
DD
= –15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= –20
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16952EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
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