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UPA2716GR

Description
SWITCHING P-CHANNEL POWER MOSFET
File Size140KB,7 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet View All

UPA2716GR Overview

SWITCHING P-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2716GR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2716GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8 : Drain
FEATURES
Low on-state resistance
R
DS(on)1
= 7.0 mΩ MAX. (V
GS
= –10 V, I
D
= –7.0 A)
R
DS(on)2
= 11.3 mΩ MAX. (V
GS
= –4.5 V, I
D
= –7.0 A)
Low C
iss
: C
iss
= 3000 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.8 MAX.
1.44
0.05 MIN.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.15
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
µ
PA2716GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–30
m20
m14
m140
2
2
150
–55 to + 150
–14
19.6
V
V
A
A
W
W
°C
°C
A
mJ
Gate
Protection
Diode
Source
Gate
Drain
EQUIVALENT CIRCUIT
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Body
Diode
Single Avalanche Current
Single Avalanche Energy
Notes 1.
2.
3.
4.
Note4
Note4
I
AS
E
AS
PW
10
µ
s, Duty Cycle
1%
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
Starting T
ch
= 25°C, V
DD
= –15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= –20
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16827EJ2V0DS00 (2nd edition)
Date Published July 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004
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