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UPA2711GR

Description
SWITCHING P-CHANNEL POWER MOSFET
File Size137KB,7 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet View All

UPA2711GR Overview

SWITCHING P-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2711GR
SWITCHING
P-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8 : Drain
DESCRIPTION
The
µ
PA2711GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Low on-state resistance
R
DS(on)1
= 9 mΩ MAX. (V
GS
=
−10
V, I
D
=
−6.5
A)
R
DS(on)2
= 15 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−6.5
A)
R
DS(on)3
= 20 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−6.5
A)
Low C
iss
: C
iss
= 2450 pF TYP.
Small and surface mount package (Power SOP8)
6.0 ±0.3
4.4
+0.10
–0.05
1
4
5.37 MAX.
1.44
0.8
1.8 MAX.
0.15
0.05 MIN.
0.5 ±0.2
0.10
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
µ
PA2711GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–30
m20
m13
m52
2
2
150
–55 to + 150
−13
16.9
V
V
A
A
W
W
°C
°C
A
mJ
Source
Gate
Body
Diode
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1.
2.
3.
4.
Remark
Note4
Note4
I
AS
E
AS
PW
10
µ
s, Duty Cycle
1%
2
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
Starting T
ch
= 25°C, V
DD
= –15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= –20
0 V
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G15979EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
2004
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