DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2706TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2706TP, which has a heat spreader, is N-channel
MOS Field Effect Transistor designed for DC/DC converter
and power management application of notebook computer.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
µ
PA2706TP
FEATURES
•
Low on-state resistance
R
DS(on)1
= 15 mΩ MAX. (V
GS
= 10 V, I
D
= 5.5 A)
R
DS(on)2
= 22.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 5.5 A)
•
Low C
iss
: C
iss
= 660 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Small and surface mount package (Power HSOP8)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, Unless otherwise noted, all terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (DC)
Note1
Note2
V
DSS
V
GSS
I
D(DC)1
I
D(DC)2
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±20
±11
±44
15
3
150
−55
to +150
11
12.1
V
V
A
A
A
W
W
°C
°C
A
mJ
Drain Current (pulse)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Note1
I
AS
E
AS
Notes 1.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
→
0 V
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16621EJ1V0DS00 (1st edition)
Date Published January 2004 NS CP(K)
Printed in Japan
2003
µ
PA2706TP
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
Note
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 5.5 A
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 4.5 V, I
D
= 5.5 A
V
GS
= 4.0 V, I
D
= 5.5 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 5.5 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
4.5
11
16
19
660
270
83
9
5
29
6
2.5
Forward Transfer Admittance
Drain to Source On-state Resistance
R
DS(on)1
R
DS(on)2
R
DS(on)3
15
22.5
29
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 15 V
V
GS
= 5.0 V
I
D
= 11 A
I
F
= 11 A, V
GS
= 0 V
I
F
= 11 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
7.1
2.1
3.1
0.84
25
17
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G16621EJ1V0DS
µ
PA2706TP
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
P
T
- Total Power Dissipation - W
15
10
5
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(DC)
I
D(pulse)
PW = 100
µs
I
D
- Drain Current - A
10
DC
1 ms
10 ms
R
DS(on)
Limited
(at V
GS
= 10 V)
1
Power Dissipation Limited
0.1
T
C
= 25°C
Single pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
: Mounted on glass epoxy board
of 1 inch x 1 inch x 0.8 mm, T
A
= 25°C
R
th(ch-C)
: T
C
= 25°C
R
th(ch-A)
100
10
R
th(ch-C)
= 8.33°C/W
1
0.1
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet G16621EJ1V0DS
3
µ
PA2706TP
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
50
45
I
D
- Drain Current - A
V
GS
= 10 V
100
Pulsed
I
D
- Drain Current - A
40
35
30
25
20
15
10
5
0
0
0.5
1
1.5
2
V
DS
- Drain to Source Voltage - V
V
DS
= 10 V
Pulsed
T
A
=
−55°C
25°C
75°C
150°C
4.5 V
4.0 V
10
1
0.1
0.01
0
1
2
3
4
5
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
V
GS(off)
- Gate Cut-off Voltage - V
100
V
DS
= 10 V
Pulsed
10
T
A
=
−55°C
25°C
75°C
150°C
2.5
2
1.5
1
0.5
0
-50
0
50
V
DS
= 10 V
I
D
= 1 mA
1
100
150
0.1
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
30
Pulsed
25
20
15
10
5
0
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
25
20
15
10
5
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
V
GS
= 4.0 V
4.5 V
I
D
= 5.5 A
10 V
4
Data Sheet G16621EJ1V0DS
µ
PA2706TP
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
35
30
25
20
15
10
5
0
-50
C
iss
, C
oss
, C
rss
- Capacitance - pF
Pulsed
V
GS
= 4.0 V
1000
C
iss
4.5 V
10 V
100
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
0
50
100
150
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
30
6
V
DD
= 24 V
15 V
6V
5
4
V
GS
3
2
V
DS
I
D
= 11 A
1
0
0
2
4
6
8
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
100
t
f
t
d(off)
t
d(on)
25
20
15
10
5
0
10
t
r
1
0.1
1
10
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
t
rr
- Reverse Recovery Time - ns
1000
Pulsed
V
GS
= 0 V
di/dt = 100 A/µs
100
I
F
- Diode Forward Current - A
10
V
GS
= 10 V
0V
1
10
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V
F(S-D)
- Source to Drain Voltage - V
1
1
10
I
F
- Diode Forward Current - A
100
Data Sheet G16621EJ1V0DS
5
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