UPA2701GR datasheet, PDF - EEWORLD Datasheet

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UPA2701GR: DescriptionSWITCHING N-CHANNEL POWER MOSFET; File Size66KB，8 Pages; ManufacturerNEC ( Renesas ); Websitehttps://www2.renesas.cn/zh-cn/

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UPA2701GR Overview

SWITCHING N-CHANNEL POWER MOSFET

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA2701GR

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The

PA2701GR is N-Channel MOS Field Effect Transistor

designed for DC/DC converters and power management

applications of notebook computers.

PACKAGE DRAWING (Unit: mm)

1, 2, 3

; Source

; Gate

5, 6, 7, 8 ; Drain

FEATURES

•

Low on-state resistance

DS(on)1

= 7.5 mΩ MAX. (V

= 10 V, I

= 7.0 A)

DS(on)2

= 11.6 mΩ MAX. (V

= 4.5 V, I

= 7.0 A)

•

Low C

iss

: C

iss

= 1200 pF TYP. (V

= 10 V, V

= 0 V)

•

Small and surface mount package (Power SOP8)

5.37 MAX.

+0.10

–0.05

6.0 ±0.3

4.4

0.8

1.8 MAX.

1.44

0.05 MIN.

ORDERING INFORMATION

PART NUMBER

PACKAGE

Power SOP8

0.15

0.5 ±0.2

0.10

1.27 0.78 MAX.

0.40

+0.10

–0.05

PA2701GR

0.12 M

ABSOLUTE MAXIMUM RATINGS (T

= 25°C, All terminals are connected.)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC)

Drain Current (pulse)

Note1

Note2

DSS

GSS

D(DC)

D(pulse)

stg

±20

±14

±56

2.0

150

–55 to +150

19.6

°C

Gate

Protection

Diode

Gate

Body

Diode

EQUIVALENT CIRCUIT

Drain

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Note3

Source

Notes 1.

≤

s, Duty Cycle

≤

Mounted on ceramic substrate of 1200 mm x 2.2 mm

Starting T

= 25°C, V

= 15 V, R

= 25

Ω,

L = 100

H, V

= 20

→

0 V

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is extemally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G15714EJ2V0DS00 (2nd edition)

Date Published May 2002 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2002

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