DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2700TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2700TP which has a heat spreader is N-Channel
MOS Field Effect Transistor designed for DC/DC converter
and power management application of notebook computer.
1.49 ±0.21
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
1.44 TYP.
FEATURES
•
Low on-state resistance
R
DS(on)1
= 5.3 mΩ MAX. (V
GS
= 10 V, I
D
= 9.0 A)
R
DS(on)2
= 7.3 mΩ MAX. (V
GS
= 4.5 V, I
D
= 9.0 A)
•
Low C
iss
: C
iss
= 2600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Small and surface mount package (Power HSOP8)
1
5.2
+0.17
–0.2
4
0.8 ±0.2
S
+0.10
–0.05
6.0 ±0.3
4.4 ±0.15
0.05 ±0.05
0.15
1.27 TYP.
0.40
1
+0.10
–0.05
0.10 S
0.12 M
1.1 ±0.2
4
ORDERING INFORMATION
2.9 MAX.
2.0 ±0.2
9
4.1 MAX.
PART NUMBER
PACKAGE
Power HSOP8
8
µ
PA2700TP
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
5
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note2
Note1
V
DSS
V
GSS
I
D(DC)1
I
D(DC)2
I
D(pulse)
P
T1
Note1
30
±20
±42
±20
±120
37
3
150
–55 to + 150
22
48.4
V
V
A
A
A
W
W
°C
°C
A
mJ
Source
Gate
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
P
T2
T
ch
T
stg
I
AS
E
AS
Body
Diode
Notes 1.
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
→
0 V
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15851EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2002
µ
PA2700TP
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
15
V
V
GS
=
5
V
I
D
= 17 A
I
F
= 17 A, V
GS
= 0 V
I
F
= 17 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 9.0 A
V
GS
= 10 V, I
D
= 9.0 A
V
GS
= 4.5 V, I
D
= 9.0 A
V
GS
= 4.0 V, I
D
= 9.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 9.0 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
11
2.0
21.5
4.2
5.5
6.3
2600
1000
340
20
24
75
22
26
7
11
0.8
50
51
1.2
5.3
7.3
8.4
MIN.
TYP.
MAX.
10
±100
2.5
UNIT
µ
A
nA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G15851EJ2V0DS
µ
PA2700TP
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
40
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
20
40
60
80
100
120 140
160
100
80
60
40
20
35
30
25
20
15
10
5
0
0
20
40
60
80
100 120 140
160
T
C
- Case Temperature - ˚C
0
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse) =
120 A
I
D
- Drain Current - A
100
d
ite V)
Lim10
)
on
S( S
=
R
D
(V
G
PW
I
D(DC) =
42 A
PW
=
1
=
m
10
s
10
m
s
1
T
C
= 25˚C
Single Pulse
0.1
Power Dissipation
Limited
PW = 100 ms
0.1
0.01
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/ W
Single
Pulse
100
R
th(ch-A)
= 89.3˚C/W
10
R
th(ch-C)
= 3.13˚C/W
1
0.1
Remark
R
th(ch-A)
: Mounted on a glass epoxy
board (1 inch x 1 inch x 0.8 mm), T
A
= 25˚C
R
th(ch-C)
: T
C
= 25˚C
0.01
0.0001
0.001
0.01
0.1
1
PW - Pulse Width - s
10
100
1000
Data Sheet G15851EJ2V0DS
3
µ
PA2700TP
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
T
A
=
−25˚C
25˚C
75˚C
150˚C
10
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
5
I
D
= 9.0 A
0
0.1
0.1
1
10
100
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
20
Pulsed
15
4.5 V
10
V
GS
= 4.0 V
3
V
DS
= 10 V
I
D
= 1 mA
2
5
10 V
1
0
0.1
1
10
100
1000
0
−50 −25
0
25
50
75
100 125 150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
80
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
70
V
GS
= 10 V
60
50
40
30
20
10
4.5 V
4.0 V
I
D
- Drain Current - A
1
0.1
T
A
= 150˚C
75˚C
25˚C
−25˚C
0.01
0
1
2
3
V
DS
= 10 V
4
5
I
D
- Drain Current - A
10
0
0.0
V
GS
- Gate to Source Voltage - V
0.6
0.2
0.4
V
DS
- Drain to Source Voltage - V
4
Data Sheet G15851EJ2V0DS
µ
PA2700TP
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
15
100
Pulsed
V
GS
= 0 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
10
10
V
GS
= 4 V
4.5 V
1
5
10 V
0.1
0
−50
−25
0.01
0
25
50
75
100 125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
C
iss
1000
C
oss
C
rss
100
1000
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
t
d(off)
t
r
t
f
t
d(on)
10
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
1
10
100
I
D
- Drain Current - A
10
0.1
V
GS
= 0 V
f = 1 MHz
1
10
100
1
0.1
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
Q
G
- Gate Charge - nC
V
DS
I
D
= 17 A
32
36
V
DD
= 24 V
15 V
6V
V
GS
7
6
5
4
3
2
1
0
40
100
10
1
0.1
1
10
100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
8
Data Sheet G15851EJ2V0DS
5
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