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UPA2700GR

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size57KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA2700GR Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2700GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2700GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
FEATURES
Low on-state resistance
R
DS(on)1
= 5.3 mΩ MAX. (V
GS
= 10 V, I
D
= 9.0 A)
R
DS(on)2
= 7.3 mΩ MAX. (V
GS
= 4.5 V, I
D
= 9.0 A)
Low C
iss
: C
iss
= 2600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 ±0.2
0.10
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
µ
PA2700GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±17
±68
2.0
150
–55 to + 150
17
28.9
V
V
A
A
W
°C
°C
A
mJ
Source
Gate
Drain
EQUIVALENT CIRCUIT
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Body
Diode
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
0 V
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15672EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2002
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