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Old Company Name in Catalogs and Other Documents
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st
, 2010, NEC Electronics Corporation merged with Renesas Technology
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took over all the business of both
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Therefore, although the old company name remains in this document, it is a valid
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April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA895TD
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• Built-in low phase distortion transistor suited for OSC applications
f
T
= 4.5 GHz TYP.,
S
21e
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• Built-in 2 transistors (2
×
2SC5800)
• 6-pin lead-less minimold (M16, 1208 package)
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
µ
PA895TD
µ
PA895TD-T3
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10152EJ02V0DS (2nd edition)
Date Published April 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 2002, 2003
µ
PA895TD
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9
5.5
1.5
100
190 in 1 element
210 in 2 elements
Unit
V
V
V
mA
mW
Junction Temperature
Storage Temperature
T
j
T
stg
150
−65
to +150
°C
°C
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
MIN.
−
−
100
3.0
5.0
3.0
4.5
−
−
TYP.
−
−
120
4.5
6.5
4.0
5.5
1.9
0.6
MAX.
600
600
145
−
−
−
−
2.5
0.8
Unit
nA
nA
−
GHz
GHz
dB
dB
dB
pF
f
T
f
T
S
21e
S
21e
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
kP
100 to 145
2
Data Sheet PU10152EJ02V0DS
µ
PA895TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
190
210
1.0
f = 1 MHz
0.8
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
2 Elements in total
0.6
150
Per Element
100
50
0.4
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 2 V
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
50
40
30
20
10
400
µ
A
360
µ
A
320
µ
A
280
µ
A
240
µ
A
200
µ
A
160
µ
A
120
µ
A
80
µ
A
I
B
= 40
µ
A
5
6
7
Collector Current I
C
(mA)
0
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
Data Sheet PU10152EJ02V0DS
3
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