TLP627X
TLP627
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
DESCRIPTION
The TLP627 is an optically coupled isolator
consisting of infrared light emitting diode and a
high voltage NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 4 pin dual in line
plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High Current Transfer Ratio ( 1000% min)
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High BV
CEO
(300V min.)
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Low input current 1mA I
F
APPLICATIONS
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Modems
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Copiers, facsimiles
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Numerical control machines
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
2.54
7.0
6.0
1.2
5.08
4.08
1
2
Dimensions in mm
4
3
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector Current I
C
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
300V
150mA
150mW
50mA
6V
70mW
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
30/1/03
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92651m-AAS/A3
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
300
0.3
10
200
MIN TYP MAX UNITS
1.0
1.15
1.3
10
V
µ
A
TEST CONDITION
I
F
= 10mA
V
R
= 4V
I
C
= 0.1mA
I
E
= 0.1mA
V
CE
= 200V
V
V
nA
Coupled
Current Transfer Ratio (CTR)
Saturated CTR (CTR
SAT
)
Collector-emitter Saturation VoltageV
CE(SAT)
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Input-output Capacitance
Cf
1000
500
4000
1.2
1.0
%
%
V
V
V
RMS
V
PK
Ω
pF
1mA I
F
, 1V V
CE
10mA I
F
, 1V V
CE
10mA I
F
, 100mA I
C
1mA I
F
, 10mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V = 0, f =1MHz
5300
7500
5x10
10
1
Output Rise Time
Output Fall Time
tr
tf
40
15
µ
s
µ
s
V
CC
= 10V, I
C
= 10mA,
R
L
= 100
Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
FIGURE 1
V
CC
Input
100
Ω
I
C
= 10mA
Output
t
on
t
r
Input
Output
10%
90%
10%
90%
t
off
t
f
30/1/03
DB92651m-AAS/A3
MEMS sensors
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