DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1917
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1917 is a switching device which can be driven
directly by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8 ±0.2
6
5
4
1.5
FEATURES
•
1.8 V drive available
•
Low on-state resistance
R
DS(on)1
= 53 mΩ MAX. (V
GS
= –4.5 V, I
D
= –3.0 A)
R
DS(on)2
= 70 mΩ MAX. (V
GS
= –2.5 V, I
D
= –3.0 A)
R
DS(on)3
= 107 mΩ MAX. (V
GS
= –1.8 V, I
D
= –1.5 A)
0 to 0.1
1
2
3
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
µ
PA1917TE
Marking : TR
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–20
m8.0
m6.0
m24
0.2
2.0
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Body
Diode
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5 sec.
Remark
Note2
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15925EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA1917
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
= –16 V
V
GS
= –4.0 V
I
D
= –6.0 A
I
F
= 6.0 A, V
GS
= 0 V
TEST CONDITIONS
V
DS
= –20 V, V
GS
= 0 V
V
GS
=
m
8.0 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1.0 mA
V
DS
= –10 V, I
D
= –3.0 A
V
GS
= –4.5 V, I
D
= –3.0 A
V
GS
= –2.5 V, I
D
= –3.0 A
V
GS
= –1.8 V, I
D
= –1.5 A
V
DS
= –10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= –10 V, I
D
= –3.0 A
V
GS
= –4.0 V
R
G
= 10
Ω
–0.45
5.0
–0.75
10.4
42
52
64
835
170
99
16
64
78
108
8.1
1.3
2.8
0.94
53
70
107
MIN.
TYP.
MAX.
–10
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
m
10
–1.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS(−)
0
10%
V
GS
90%
I
G
=
−2
mA
50
Ω
R
L
V
DD
V
DD
PG.
90%
V
DS(−)
90%
10%
10%
V
GS(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G15925EJ1V0DS
µ
PA1917
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
120
2.4
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
2
80
1.6
60
1.2
40
0.8
0.4
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
- 100
R
DS(on)
Limited
(V
GS
=
−4.5
V)
T
A
- Ambient Temperature -
°C
I
D(pulse)
PW = 100
µs
- 10
I
D
- Drain Current - A
I
D(DC)
1 ms
-1
10 ms
100 ms
- 0.1
Single Pulse
Mounted on FR-4 board of
50 mm×50 mm×1.6 mm
5s
- 0.01
- 0.1
-1
- 10
- 100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
Single Pulse
Without board
100
10
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
1
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15925EJ1V0DS
3
µ
PA1917
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 20
Pulsed
- 16
V
GS
=
−
4.5 V
FORWARD TRANSFER CHARACTERISTICS
-100
-10
I
D
- Drain Current - A
−
2.5 V
I
D
- Drain Current - A
-1
-0.1
-0.01
-0.001
-0.0001
- 12
-8
−
1.8 V
T
A
= 125
°
C
75
°
C
25
°
C
−
25
°
C
-4
0
0
-0.2
-0.4
-0.6
-0.8
-1
-0.00001
0
-1
-2
Pulsed
V
DS
=
−
10 V
-3
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-1.3
100
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
T
A
=
−25°C
25
°
C
75°C
125
°
C
Pulsed
V
DS
=
−10
V
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
=
−
10 V
I
D
=
−1
mA
10
-0.8
1
0.1
-0.3
-50
0
50
100
150
0.01
-0.01
-0.1
-1
-10
-100
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
140
120
100
80
60
40
20
-0.01
Pulsed
V
GS
=
−
4.5 V
140
120
100
80
60
40
20
-0.01
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs.DRAIN CURRENT
Pulsed
V
GS
=
−2.5
V
T
A
= 125°C
75°C
25°C
−25°C
T
A
= 125°C
75°C
25°C
-25°C
-0.1
-1
-10
-100
-0.1
-1
-10
-100
I
D
– Drain Current - A
I
D
- Drain Current - A
4
Data Sheet G15925EJ1V0DS
µ
PA1917
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Pulsed
V
GS
=
−
1.8 V
120
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
100
I
D
80
Pulsed
=
−
3.0 A
140
100
T
A
= 125°C
80
75°C
25
°
C
60
−
25
°
C
60
40
40
20
-0.01
20
0
-2
-4
-6
-8
- 10
-0.1
-1
-10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
100
Pulsed
I
D
=
−
3.0 A
80
−
2.5 V
−4.5
V
V
GS
= -1.8 V
(I
D
=
−1.5
A)
V
GS
– Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
f = 1MHz
V
GS
= 0 V
C
iss
, C
oss
, C
rss
- Capacitance - pF
1000
C
iss
60
100
C
oss
C
rss
40
20
-50
0
50
100
150
10
-0.1
-1
-10
-100
T
ch
– Channel Temperrature -
°C
SWITCHING CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-5
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time – ns
V
GS
– Gate to Source Voltage - V
V
DD
=
−15
V
V
GS
=
−4.0
V
R
G
= 10
Ω
t
f
I
D
=
−
6.0 A
-4
V
DD
=
−
4 V
−10
V
−
16 V
100
t
r
t
d(off)
-3
-2
10
t
d(on)
-1
1
-0.1
0
-1
-10
0
2
4
6
8
I
D
- Drain Current - A
Data Sheet G15925EJ1V0DS
Q
G
– Gate Charge - nC
5
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