DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1911A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1911A is a switching device which can be driven
directly by a 2.5 V power source.
The
µ
PA1911A features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8 ±0.2
6
5
4
1.5
FEATURES
•
Can be driven by a 2.5 V power source
•
Low on-state resistance
R
DS(on)1
= 115 mΩ MAX. (V
GS
= –4.5 V, I
D
= –1.5 A)
R
DS(on)2
= 120 mΩ MAX. (V
GS
= –4.0 V, I
D
= –1.5 A)
R
DS(on)3
= 190 mΩ MAX. (V
GS
= –2.5 V, I
D
= –1.0 A)
0 to 0.1
1
2
3
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
Note
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
µ
PA1911ATE
Note
Marking: TK
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
–20
12
2.5
10
0.2
2
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Body
Diode
Total Power Dissipation
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5 sec.
Remark
P
T2
T
ch
T
stg
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15044EJ1V0DS00 (1st edition)
Date Published April 2001 NS CP(K)
Printed in Japan
©
2001
µ
PA1911A
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= –10 V
I
D
= –2.5 A
V
GS
= –4.0 V
I
F
= 2.5 A, V
GS
= 0 V
I
F
= 2.5 A, V
GS
= 0 V
di/dt = 10 A /
µ
s
TEST CONDITIONS
V
DS
= –20 V, V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –1.5 A
V
GS
= –4.5 V, I
D
= –1.5 A
V
GS
= –4.0 V, I
D
= –1.5 A
V
GS
= –2.5 V, I
D
= –1.0 A
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –10 V, I
D
= –1.5 A
V
GS
= –4.0 V
R
G
= 10
Ω
–0.5
1
–1.0
5.4
82
86
122
370
110
40
130
230
470
380
2.3
1.0
1.0
0.84
14
1.4
115
120
190
MIN.
TYP.
MAX.
–10
10
–1.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90%
90%
I
D
0 10%
t
d(on)
t
on
t
r
t
d(off)
t
off
10%
t
f
V
GS
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
I
G
= 2 mA
10%
V
GS(on)
90%
V
GS
Wave Form
R
L
V
DD
0
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
2
Data Sheet G15044EJ1V0DS
µ
PA1911A
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
−100
100
dT - Derating Factor - %
80
I
D
- Drain Current - A
−10
60
d
ite
)
im
4.5V
)
L
(on
=
−
S
R
D
V
GS
I
D(DC)
(@
I
D(pulse)
1m
s
10
10
ms
−1
0m
DC
s
40
−0.1
20
0
0
30
60
90
120
T
A
- Ambient Temperature -
°C
150
−0.01
−0.1
Single Pulse
Mounted on 2500mm
2
x 35
µ
m Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm FR-4 Board
−1.0
−10.0
V
DS
- Drain to Source Voltage - V
−100.0
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
−10
V
GS
=
−4.0V
FORWARD TRANSFER CHARACTERISTICS
−100
−10
I
D
- Drain Current - A
V
DS
=
−10
V
−8
I
D
- Drain Current - A
−1
−0.1
−0.01
−0.001
−0.0001
T
A
=
+125°C
−6
−4
−2
V
GS
=
−4.5V
T
A
=
+75°C
T
A
=
+25°C
T
A
=
−25°C
V
GS
=
−2.5V
0
0.0
−0.2
−0.4
−0.6
−0.8
V
DS
- Drain to Source Voltage - V
−1.0
−0.00001
0.0
−0.5
−1.0
−1.5
−2.0
−2.5
V
GS
- Gate to Sorce Voltage - V
−3.0
V
GS(off)
- Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
−1.5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
=
−10
V
I
D
=
−1
mA
100.00
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
=
−10
V
T
A
=
+25°C
10.00
T
A
=
−25°C
−1.0
1.00
T
A
=
+75°C
0.10
T
A
=
+125°C
−0.5
−50
T
ch
0
50
100
- Channel Temperature -
°C
150
0.01
−0.01
−0.10
−1.00
−10.00
−100.00
I
D
- Drain Current - A
Data Sheet G15044EJ1V0DS
3
µ
PA1911A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
V
GS
=
−2.5
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V
GS
=
−4.0
V
250
200
150
100
50
0
−0.01
T
A
=
+125°C
T
A
=
+75°C
150
T
A
=
+125°C
T
A
=
+75°C
100
50
T
A
=
+25°C
T
A
=
−25°C
T
A
=
−25°C
T
A
=
+25°C
−0.10
−1.00
−10.00
−100.00
0
−0.01
−0.10
−1.00
−10.00
−100.00
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V
GS
=
−4.5
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
I
D
=
−1.5
A
150
T
A
=
+125°C
T
A
=
+75°C
150
V
GS
=
−2.5
V
100
100
50
T
A
=
−25°C
T
A
=
+25°C
50
V
GS
=
−4.5
V
V
GS
=
−4.0
V
0
−0.01
0
−50
50
100
0
T
ch
- Channel Temperature -
°C
150
−0.10
−1.00
−10.00
−100.00
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
I
D
=
−1.5
A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
C
iss
, C
oss
, C
rss
- Capacitance - pF
f = 1MH
Z
V
GS
= 0V
150
C
iss
100
100
C
oss
50
C
rss
0
0.0
−2.0
−4.0
−6.0
−8.0 −10.0
V
GS
- Gate to Source Voltage - V
−12.0
10
−0.1
−1.0
−10.0
V
DS
- Drain to Source Voltage - V
−150
4
Data Sheet G15044EJ1V0DS
µ
PA1911A
SWITCHING CHARACTERISTICS
1000.00
t
d(on)
, t
r
, t
d(off)
. t
f
- Switching Time - ns
t
f
t
d(off)
t
r
t
d(on)
SOURCE TO DRAIN FORWARD VOLTAGE
100.00
I
F
- Source to Drain Current - A
V
GS
= 0 V
10.00
100.00
1.00
0.10
10.00
−0.10
V
DD
=
−10
V
V
GS
=
−4.0
V
R
G
= 10
Ω
0.01
−1.00
I
D
- Drain Current - A
−10.00
0.4
0.6
0.8
1.0
1.2
V
F(S-D)
- Body Diode Forward Voltage - V
DYNAMIC INPUT CHARACTERISTICS
−4
V
GS
- Gate to Source Voltage - V
I
D
=
−2.5
A
−3
V
DD
=
−16
V
V
DD
=
−10
V
−2
V
DD
=
−6
V
−1
0
0
0.5
1
1.5
2
2.5
3
Q
G
Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch - A)
- Transient Thermal Resistance -
°C/W
Single Pulse
Without Board
100
10
Mounted on 2500mm
2
x 35
µ
m Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm FR-4 Board
1
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15044EJ1V0DS
5
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