LITE-ON
SEMICONDUCTOR
SBF1650CT thru 1660CT
REVERSE VOLTAGE
- 50
to
60
Volts
FORWARD CURRENT
- 16
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
K
ITO-220AB
M
ITO-220AB
DIM.
MIN.
MAX.
A
B
C
A
15.50
10.0
3.00
9.00
2.90
13.46
1.15
2.40
0.75
16.50
10.40
3.50
9.30
3.60
14.22
1.70
2.70
1.00
C
PIN
1
E
D
E
F
J
2
3
D
F
G
I
G
H
I
J
K
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
H
H
L
N
PIN 1
PIN 3
PIN 2
0.45
0.70
3.00
3.30
4.36
4.77
L
M
2.48
2.80
2.80
2.50
N
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
@T
C
=95
C
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Forward Voltage
at 8A DC (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
SYMBOL
SBF1650CT
50
35
50
SBF1660CT
60
42
60
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
16
175
I
FSM
V
F
@T
J
=25 C
@T
J
=100 C
I
R
C
J
R
0JC
A
0.7
0.5
50
300
3.5
-55 to +150
-55 to +150
2000
V
mA
pF
C/W
T
J
T
STG
V
dis
C
C
V
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Case.
REV. 1, Aug-2007, KTHC26
RATING AND CHARACTERISTIC CURVES
SBF1650CT thru SBF1660CT
AVERAGE FORWARD CURRENT
AMPERES
16
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
210
175
140
105
70
35
8.3ms Single Half-Sine-Wave
12
8
4
RESISTIVE OR INDUCTIVE LOAD
0
0
1
2
5
10
20
50
100
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
10
10
1
T
J
= 100 C
0.1
T
J
= 75 C
1.0
0.01
T
J
= 25 C
T
J
= 25 C
PULSE WIDTH 300ua
300us
2% Duty cycle
0.001
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
= 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
MEMS sensors
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