SG2823J datasheet, PDF - EEWORLD Datasheet

SG2823J: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, DIP-18; CategoryDiscrete semiconductor The transistor; File Size640KB，9 Pages; ManufacturerLinfinity Microelectronics

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Small Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, DIP-18

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Linfinity Microelectronics
package instruction	HERMETIC SEALED, CERAMIC, DIP-18
Reach Compliance Code	unknown
Other features	LOGIC LEVEL COMPATIBLE
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	95 V
Configuration	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JESD-30 code	R-CDIP-T18
JESD-609 code	e0
Number of components	8
Number of terminals	18
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1.6 V

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