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UPA1890

Description
N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size87KB,12 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1890 Overview

N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1890
N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1890 is a switching device which can be driven directly
by a 4.0-V power source.
The
µ
PA1890 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
1.2 MAX.
1.0±0.05
0.25
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
Can be driven by a 4.0-V power source
Low on-state resistance
N-Channel R
DS(on)1
= 27 mΩ MAX. (V
GS
= 10 V, I
D
= 3.0 A)
R
DS(on)2
= 37 mΩ MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)3
= 47 mΩ MAX. (V
GS
= 4.0 V, I
D
= 3.0 A)
P-Channel R
DS(on)1
= 37 mΩ MAX. (V
GS
= –10 V, I
D
= –2.5 A)
R
DS(on)2
= 56 mΩ MAX. (V
GS
= –4.5 V, I
D
= –2.5 A)
R
DS(on)3
= 64 mΩ MAX. (V
GS
= –4.0 V, I
D
= –2.5 A)
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.65
0.8 MAX.
0.10 M
0.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.27
+0.03
–0.08
µ
PA1890GR-9JG
EQUIVALENT CIRCUIT
Drain1
Drain2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
N-Channel / P-Channel
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30/–30
±20/
#
20
±6.0
/
#
5.0
±24
/
#
20
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Gate1
Body
Diode
Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Total Power Dissipation
Channel Temperature
Storage Temperature
N-Channel
P-Channel
Notes 1.
PW
10
µ
s, Duty Cycle
1 %
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
To keep good radiate condition,
it is recommended that all pins
are soldering to print board.
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14762EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
©
2000

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