DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1874B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
8
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
DESCRIPTION
The
µ
PA1874B is a switching device, which can be driven
directly by a 2.5 V power source.
The
µ
PA1874B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
FEATURES
•
2.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 14.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)2
= 14.5 mΩ MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
R
DS(on)3
= 16.5 mΩ MAX. (V
GS
= 3.1 V, I
D
= 4.0 A)
R
DS(on)4
= 19.5 mΩ MAX. (V
GS
= 2.5 V, I
D
= 4.0 A)
•
Built-in G-S protection diode against ESD
0.1±0.05
1
4
0.5
0.6
+0.15
–0.1
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.65
0.27
+0.03
–0.08
0.8 MAX.
0.10 M
0.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
µ
PA1874BGR-9JG
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note 1
Note 2
Note 1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
2
30.0
±12.0
±8.0
±80.0
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Gate1
EQUIVALENT CIRCUIT
Drain1
Drain2
Drain Current (pulse)
Body
Diode
Gate2
Gate
Protection
Diode
Source2
Body
Diode
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Protection
Diode
Source1
Notes 1.
Mounted on ceramic board of 50 cm x 1.1 mm
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16743EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2004
µ
PA1874B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
R
DS(on)4
TEST CONDITIONS
V
DS
= 30.0 V, V
GS
= 0 V
V
GS
= ±12.0 V, V
DS
= 0 V
V
DS
= 10.0 V, I
D
= 1.0 mA
V
DS
= 10.0 V, I
D
= 4.0 A
V
GS
= 4.5 V, I
D
= 4.0 A
V
GS
= 4.0 V, I
D
= 4.0 A
V
GS
= 3.1 V, I
D
= 4.0 A
V
GS
= 2.5 V, I
D
= 4.0 A
V
DS
= 10.0 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 10.0 V, I
D
= 4.0 A
V
GS
= 4.0 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
1.0
±10.0
UNIT
µ
A
µ
A
V
S
0.50
5
9.0
9.5
10.0
11.0
1.00
1.50
Drain to Source On-state Resistance
11.5
12.0
13.0
15.0
930
170
120
46
230
260
250
14.0
14.5
16.5
19.5
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 24.0 V
V
GS
= 4.0 V
I
D
= 8.0 A
I
F
= 8.0 A, V
GS
= 0 V
I
F
= 8.0 A, V
GS
= 0 V
di/dt = 50 A/
µ
s
10.0
2.0
4.5
0.82
150
80
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
D.U.T.
V
GS
0
10%
I
G
= 2 mA
V
GS
90%
R
L
V
DD
V
DD
PG.
90%
90%
10%
10%
50
Ω
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16743EJ1V0DS
µ
PA1874B
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
P
T
- Total Power Dissipation - W
2
1.5
1
0.5
0
0
25
50
Mounted on ceramic board of
50 cm
2
x 1.1 mm, 2 units
Mounted on FR-4 board of
2
25 cm x 1.6 mm, 2 units
75
100
125
150
175
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
A
- Ambient Temperature -
°C
1000
100
10
I
D(DC)
R
DS(on)
Limited
(at V
GS
= 4.5 V)
I
D
- Drain Current - A
PW = 10
µs
100
µs
1 ms
10 ms
1
0.1
0.01
Single pulse
Mounted on ceramic board of
50 cm
2
x 1.1 mm
P
D
(FET1) : P
D
(FET2) = 1:1
100 ms
DC
(2 units)
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
Mounted on FR-4 board of
25 cm
2
x 1.6 mm
100
Mounted on ceramic board of
50 cm
2
x 1.1 mm
10
1
Single pulse
P
D
(FET1) : P
D
(FET2) = 1:1
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16743EJ1V0DS
3
µ
PA1874B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
40
Pulsed
4.0 V
I
D
- Drain Current - A
30
3.1 V
20
I
D
- Drain Current - A
V
GS
= 4.5 V
10
1
0.1
0.01
0.001
V
DS
=10.0 V
Pulsed
T
A
= 125°C
75°C
25°C
−25°C
10
2.5 V
0
0
0.1
0.2
0.3
0.4
0.5
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
= 10.0 V
I
D
= 1.0 mA
0.5
1
1.5
2
2.5
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10.0 V
Pulsed
10
T
A
=
−
25°C
25°C
75°C
125°C
1.5
V
GS(off)
- Gate Cut-off Voltage - V
1
1
0.5
-50
0
50
100
150
0.1
0.01
0.1
1
10
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
V
GS
= 4.5 V
Pulsed
30
T
A
= 125°C
75°C
25°C
−25°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
V
GS
= 4.0 V
Pulsed
30
T
A
= 125°C
75°C
25°C
−25°C
20
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
10
10
0
0.1
1
10
100
0
0.1
1
10
100
I
D
- Drain Current - A
I
D
- Drain Current - A
4
Data Sheet G16743EJ1V0DS
µ
PA1874B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
T
A
= 125°C
75°C
25°C
−25°C
V
GS
= 3.1 V
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
T
A
= 125°C
75°C
25°C
−25°C
V
GS
= 2.5 V
Pulsed
30
30
20
20
10
10
0
0.1
1
10
100
0
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
I
D
= 4.0 A
Pulsed
30
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
I
D
= 4.0 A
Pulsed
V
GS
= 2.5 V
3.1 V
4.0 V
4.5 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
30
20
20
10
10
0
0
2
4
6
8
10
12
0
-50
0
50
100
150
V
GS
- Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
V
GS
= 0 V
f = 1.0 MHz
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(off)
t
f
100
t
r
t
d(on)
V
DD
= 10.0 V
V
GS
= 4.0 V
R
G
= 10
Ω
1
I
D
- Drain Current - A
1000
C
iss
100
C
oss
C
rss
10
0.1
1
10
100
10
0.1
10
V
DS
- Drain to Source Voltage - V
Data Sheet G16743EJ1V0DS
5
京公网安备 11010802033920号
EEWORLD
