DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1852
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1852 is a switching device which can be
driven directly by a 2.5
-
V power source.
The
µ
PA1852 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
Can be driven by a 2.5-V power source
•
Low on-state resistance
R
DS(on)1
= 40 mΩ MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 45 mΩ MAX. (V
GS
= 4.0 V, I
D
= 3.0 A)
R
DS(on)3
= 60 mΩ MAX. (V
GS
= 2.5 V, I
D
= 3.0 A)
•
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1852GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
20
±12
±6.0
±
24
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Gate1
EQUIVALENT CIRCUIT
Drain1
Drain2
Total Power Dissipation
Channel Temperature
Storage Temperature
Body
Diode
Gate2
Body
Diode
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
Source1
Gate
Protection
Diode
Source2
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D12803EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
©
1997, 1999
µ
PA1852
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±
12 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 3.0 A
V
GS
= 4.5 V, I
D
= 3.0 A
V
GS
= 4.0 V, I
D
= 3.0 A
V
GS
= 2.5 V, I
D
= 3.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V
I
D
= 1.5 A
V
GS(on)
= 4.0 V
R
G
= 10
Ω
V
DD
= 10 V
I
D
= 6.0 A
V
GS
= 4.0 V
I
F
= 6.0 A, V
GS
= 0 V
I
F
= 6.0 A, V
GS
= 0 V
di/dt = 15 A /
µ
s
0.5
1
0.74
10
29
31
39
420
265
120
55
160
385
355
6
2
3
0.74
20
2
40
45
60
MIN.
TYP.
MAX.
10
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
±
10
1.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet D12803EJ1V0DS00
µ
PA1852
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
FORWARD BIAS SAFE OPERATING AREA
100
d
ite )
im V
)
L 4.5
on
=
S(
R
D
V
GS
I
D
(
DC
)
(@
I
D
(pulse)
dT - Derating Factor - %
PW
I
D
- Drain Current - A
10
=1
10
ms
10
0m
DC
s
ms
60
1
40
20
0
Single Pulse
Mounted on Ceramic
2
Substrate of 50cm x 1.1mm
0.01
P
D
(FET1) : P
D
(FET2) = 1:1
0.1
30
60
90
120
T
A
- Ambient Temperature -
˚C
150
0.1
1.0
10.0
100.0
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
V
GS
= 4.5 V
4.0 V
2.5 V
15
TRANSFER CHARACTERISTICS
100
V
DS
= 10 V
I
D
- Drain Current - A
I
D
- Drain Current - A
20
10
1
T
A
= 125 ˚C
0.1
10
75 ˚C
25 ˚C
−25
˚C
5
0
0
0.8
V
DS
- Drain to Source Voltage - V
0.2
0.4
0.6
1
0.01
0.001
0
1
2
3
4
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
100
| y
fs
| - Forward Transfer Admittance - S
V
GS(off)
- Gate to Source Cut-off Voltage - V
1.5
V
DS
= 10 V
I
D
= 1 mA
V
DS
= 10 V
1
10
T
A
=
−25
˚C
25
˚C
75
˚C
125
˚C
0.5
1
0
−50
0
50
100
150
0.1
0.1
1
10
100
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
Data Sheet D12803EJ1V0DS00
3
µ
PA1852
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
70
60
50
40
30
20
0.1
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS
= 4.0 V
50
T
A
= 125˚C
R
DS(on)
- Drain to Source On-State Resistance - mΩ
T
A
= 125˚C
75˚C
25˚C
−25˚C
R
DS(on)
- Drain to Source On-State Resistance - mΩ
40
75˚C
25˚C
30
−25˚C
1
10
100
20
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS
= 4.5 V
50
T
A
= 125˚C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
I
D
= 3.0 A
60
V
GS
= 2.5 V
4.0 V
40
75˚C
25˚C
−25˚C
40
4.5 V
30
20
20
0.1
1
10
100
0
−50
T
ch
0
I
D
- Drain Current - A
50
100
- Channel Temperature -˚C
150
R
DS (on)
- Drain to Source On-state Resistance - mΩ
Ciss, Coss, Crss - Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
I
D
= 3.0 A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
f = 1 MHz
C
iss
C
oss
100
C
rss
60
40
20
10
0.1
0
2
4
6
8
10
12
1
10
100
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
4
Data Sheet D12803EJ1V0DS00
µ
PA1852
SWITCHING CHARACTERISTICS
1000
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
I
F
- Source to Drain Current - A
tr
tf
td
(off)
1
0.1
100
td
(on)
0.01
0.001
V
GS
= 0 V
0.6
0.8
1
V
F(S-D)
- Source to Drain Voltage - V
V
DD
= 10V
V
GS
(
on
) = 4.0V
10 R
G
= 10Ω
1
0.1
10
I
D
- Drain Current - A
100
0.0001
0.4
DYNAMIC INPUT CHARACTERISTICS
6
V
GS
- Gate to Source Voltage - V
I
D
= 6.0 A
5
V
DD
= 10 V
4
3
2
1
0
0
2
4
6
Q
G
- Gate Charge - nC
8
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
62.5˚C/W
10
1
Mounted on Ceramic Substrate
of 50cm
2
x 1.1mm
Single Pulse
P
D
(FET1) : P
D
(FET2) = 1:1
0.1
1m
10m
100m
1
10
100
1000
PW - Pulse Width - S
Data Sheet D12803EJ1V0DS00
5
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