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BZX84B62-VGS18

Description
DIODE 62 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-3, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size109KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

BZX84B62-VGS18 Overview

DIODE 62 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-3, Voltage Regulator Diode

BZX84B62-VGS18 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
BZX84-V-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
3
1
2
20421
• These diodes are also available in other case
styles and other configurations including: the
SOD-123 case with type designation BZT52
series, the zener diode common anode
configuration in the SOT-23 case with type
designation AZ23 series and the zener diode
common cathode configuration in the SOT-23 case with
type designation DZ23 series
• The Zener voltages are graded according to the
international E 24 standard. Standard zener voltage
tolerance is ± 5 %. Replace “C” with “B” for 2 % tolerance.
• Silicon planar power Zener diodes
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2; 5
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
BZX84-V-series
BZX84-V-series
ORDERING CODE
BZX84-V-series-GS18
BZX84-V-series-GS08
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
3000 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
15 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power dissipation
TEST CONDITION
T
amb
= 25 °C,
device on fiberglass substrate,
acc. layout on page 7
T
amb
= 25 °C,
device on fiberglass substrate,
acc. layout on page 7
SYMBOL
P
tot
VALUE
300
UNIT
mW
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
R
thJA
T
j
T
stg
420
150
- 65 to + 150
K/W
°C
°C
Rev. 1.9, 08-Dec-11
Document Number: 85763
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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