DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1818
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
The
µ
PA1818 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0±0.05
0.25
FEATURES
•
2.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 15.2 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−5.0
A)
R
DS(on)2
= 16 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−5.0
A)
R
DS(on)3
= 25 mΩ MAX. (V
GS
=
−2.5
V, I
D
=
−5.0
A)
•
Built-in G-S protection diode against ESD
3°
+5°
–3°
0.1±0.05
1
4
0.5
0.6
+0.15
–0.1
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1818GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−20
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
m
12
m
10
m
40
2.0
150
−55
to +150
Gate
Gate
Protection
Diode
Body
Diode
Total Power Dissipation
Channel Temperature
Storage Temperature
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G16254EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA1818
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
−
16 V
V
GS
=
−
4.0 V
I
D
=
−
10 A
I
F
= 10 A, V
GS
= 0 V
I
F
= 10 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
TEST CONDITIONS
V
DS
=
−
20 V, V
GS
= 0 V
V
GS
=
MIN.
TYP.
MAX.
UNIT
−
1.0
µ
A
µ
A
V
S
m
12 V, V
DS
= 0 V
−
0.5
12
m
10
−
1.1
24
12.1
12.7
18.8
2200
510
310
23
207
139
193
20
5.0
6.0
0.82
44
28
15.2
16
25
V
DS
=
−
10 V, I
D
=
−
1.0 mA
V
DS
=
−
10 V, I
D
=
−
5.0 A
V
GS
=
−
4.5 V, I
D
=
−
5.0 A
V
GS
=
−
4.0 V, I
D
=
−
5.0 A
V
GS
=
−
2.5 V, I
D
=
−
5.0 A
V
DS
=
−
10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
=
−
10 V, I
D
=
−
5.0 A
V
GS
=
−
4.0 V
R
G
= 10
Ω
−
1.5
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
V
GS(−)
D.U.T.
R
L
PG.
R
G
V
DD
V
DS
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
I
G
=
−2
mA
50
Ω
R
L
V
DD
V
GS
Wave Form
0
10 %
V
GS
90 %
V
DS(−)
90 %
90 %
10 % 10 %
PG.
V
DS
V
GS (−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16254EJ1V0DS
µ
PA1818
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
2
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
80
1.5
60
1
40
20
0.5
Mounted on FR-4 board
2
of 2500 mm x 1.6 mm
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
-100
I
D(pulse)
I
D(DC)
-10
PW = 1 ms
T
A
- Ambient Temperature -
°C
I
D
- Drain Current - A
10 ms
-1
R
DS(on)
Limited
(V
GS
=
−4.5
V)
DC
100 ms
-0.1
Single pulse
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
-0.01
-0.1
-1
-10
-100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
Single pulse
Mounted on FR-4 board
2
of 2500 mm x 1.6 mm
125°C/W
100
10
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
62.5°C/W
1
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16254EJ1V0DS
3
µ
PA1818
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 40
Pulsed
V
GS
=
−4.5
V
- 100
FORWARD TRANSFER CHARACTERISTICS
V
DS
=
−10
V
Pulsed
I
D
- Drain Current - A
- 30
I
D
- Drain Current - A
−4.0
V
- 10
-1
T
A
= 125°C
75°C
25°C
−25°C
−2.5
V
- 20
- 0.1
- 0.01
- 10
- 0.001
0
0
- 0.2
- 0.4
- 0.6
- 0.8
- 0.0001
- 0.5
-1
- 1.5
-2
- 2.5
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
- 1.4
100
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
V
DS
=
−10
V
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
=
−10
V
I
D
=
−1.0
mA
- 1.2
10
T
A
=
−25°C
25°C
75°C
125°C
1
-1
- 0.8
- 0.6
- 0.4
-50
0
50
100
150
0.1
- 0.01
- 0.1
-1
- 10
- 100
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
30
I
D
=
−5.0
A
Pulsed
V
GS
=
−2.5
V
20
30
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.GATE TO SOURCE VOLTAGE
I
D
=
−5.0
A
Pulsed
20
10
−4.0
V
−4.5
V
10
0
-50
0
0
-2
-4
-6
-8
-10
-12
0
50
100
150
T
ch
– Channel Temperrature -
°C
V
GS
- Gate to Source Voltage - V
4
Data Sheet G16254EJ1V0DS
µ
PA1818
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
30
V
GS
=
−4.5
V
Pulsed
T
A
= 125°C
75°C
25°C
-25°C
30
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS
=
−4.0
V
Pulsed
T
A
= 125°C
75°C
25°C
−25°C
20
20
10
10
0
- 0.01
- 0.1
-1
- 10
- 100
0
- 0.01
- 0.1
-1
- 10
- 100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
30
V
GS
=
−2.5
V
Pulsed
10000
I
D
- Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0 V
f = 1.0 MHz
20
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
1000
10
T
A
= 125°C
75°C
25°C
−25°C
C
oss
C
rss
0
- 0.01
- 0.1
-1
- 10
- 100
100
- 0.1
-1
- 10
- 100
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
10000
V
DD
=
−10
V
V
GS
=
−4.0
V
R
G
= 10
Ω
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
V
GS
= 0 V
Pulsed
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
I
F
- Diode Forward Current - A
10
1000
t
f
1
t
d(off)
100
t
d(on)
t
r
10
- 0.01
0.1
0.01
- 0.1
-1
- 10
0.4
0.6
0.8
1
1.2
I
D
- Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
Data Sheet G16254EJ1V0DS
5
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