EEWORLDEEWORLDEEWORLD

Part Number

Search

UPA1813GR-9JG

Description
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size59KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet Compare View All

UPA1813GR-9JG Overview

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1813
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1813 is a switching device which can be
driven directly by a 2.5-V power source.
The
µ
PA1813 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1, 5, 8 : Drain
2, 3, 6, 7: Source
4
: Gate
1.2 MAX.
1.0±0.05
0.25
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
R
DS(on)1
= 25 mΩ MAX. (V
GS
= –4.5 V, I
D
= –2.5 A)
R
DS(on)2
= 30 mΩ MAX. (V
GS
= –4.0 V, I
D
= –2.5 A)
R
DS(on)3
= 40 mΩ MAX. (V
GS
= –2.5 V, I
D
= –2.5 A)
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1813GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
–12
–10/+5
±5.0
±20
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Body
Diode
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
10
µ
s, Duty Cycle
1 %
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13294EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
©
1998, 1999

UPA1813GR-9JG Related Products

UPA1813GR-9JG UPA1813
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Recommended Resources

NiosII Embedded System Development Manual ver1.0.1_20130114
I would like to share my "Nios II Embedded System Development Manual". You are welcome to download and give your comments. A few months ago, I published the Nios II embedded system development platfor...
xuxin813 FPGA/CPLD
Asking for advice on isolation
The entire sensor-isolation device-microcontroller system uses batteries, and the sensor end does not want to add an additional power module; what should be done on the sensor side to generate a press...
yangxf1217 MCU
Questions about PCB
I want to draw a board and need the schematic and pcb library of ethernet 100/1000. The schematic can be drawn by myself, but it is a bit difficult to draw the pcb library. Does anyone have these two?...
yan_richard Microcontroller MCU
About the EK-LM3S811-ND board
I am using IAR EW for ARM 6.30. The driver is on the CD and cannot be downloaded or debugged. Is it possible to use only CSS or Keil?...
peter_ly Microcontroller MCU
Can two interrupt processing functions be used to send and receive interrupts?
See the attached picture. From the STM32F042 startup file startup_stm32f042.s, we can see that USART2 has only one interrupt handling function: USART2_IRQHandler. Now, I want to use two interrupt func...
yhye2world stm32/stm8
Can MP's error message be more humane?
Traceback (most recent call last):File "main.py", line 199, inOSError: [Errno 104] ECONNRESET I got this error and was totally confused :Cry:...
grey27 MicroPython Open Source section

Popular Articles

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2801  2165  2305  2413  570  57  44  47  49  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号