DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1814
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1814 is a switching device which can be
driven directly by a 4 V power source.
The
µ
PA1814 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1, 5, 8 : Drain
2, 3, 6, 7: Source
4
: Gate
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
5
•
Can be driven by a 4 V power source
•
Low on-state resistance
R
DS(on)1
= 16 mΩ MAX. (V
GS
= –10 V, I
D
= –3.5 A)
R
DS(on)2
= 24 mΩ MAX. (V
GS
= –4.5 V, I
D
= –3.5 A)
R
DS(on)3
= 27 mΩ MAX. (V
GS
= –4.0 V, I
D
= –3.5 A)
•
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1814GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
–30
±20
±7.0
±28
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Body
Diode
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13804EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1998, 1999
µ
PA1814
5
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
TEST CONDITIONS
V
DS
= –30 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –3.5 A
V
GS
= –10 V, I
D
= –3.5 A
V
GS
= –4.5 V, I
D
= –3.5 A
V
GS
= –4.0 V, I
D
= –3.5 A
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –15 V
I
D
= –3.5 A
V
GS(on)
= –10 V
R
G
= 10
Ω
V
DS
= –24 V
I
D
= –7.0 A
V
GS
= –10 V
I
F
= 7.0 A, V
GS
= 0 V
–1.0
3
–1.7
14
12
18
20
2180
658
303
30
140
97
86
38
5.9
8.5
0.79
16
24
27
MIN.
TYP.
MAX.
–10
±10
–2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet D13804EJ1V0DS00
µ
PA1814
5
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
FORWARD BIAS SAFE OPERATING AREA
−100
R
V
(@
)
(on
DS
GS
dT - Derating Factor - %
d
ite )
Lim 10 V
=
I
D
(pulse)
PW
I
D
- Drain Current - A
−10
I
D
(DC)
=1
60
ms
10
0m
s
10
ms
−1
40
DC
20
0
30
60
120
90
T
A
- Ambient Temperature -
˚C
150
T
A
= 25˚C
Single Pulse
Mounted on Ceramic
2
−0.01
Substrate of 50cm x 1.1mm
−0.1
−0.1
−1
−10
−100
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−25
−20
−15
−10
−5
FORWARD TRANSFER CHARACTERISTICS
−100
−10
V
DS
=
−10
V
I
D
- Drain Current - A
I
D
- Drain Current - A
V
GS
=
−10
V
−4.5
V
−4.0
V
−1
−0.1
−0.01
−0.001
−0.0001
T
A
= 125˚C
75˚C
T
A
= 25˚C
−25˚C
0
−0.2
−0.4
−0.6
−0.8
−1.0
−0.00001
−0.5
−1.5
−2.5
−3.5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
100
| y
fs
| - Forward Transfer Admittance - S
V
GS(off)
- Gate to Source Cut-off Voltage - V
−2.0
V
DS
=
−10
V
I
D
=
−1
mA
V
DS
=
−10
V
10
T
A
=
−25
˚C
25˚C
75˚C
125˚C
−1.5
1
0.1
−1.0
−50
0
50
100
150
T
ch
- Channel Temperature - ˚C
0.01
−0.01
−0.1
−1
−10
−100
I
D
- Drain Current - A
Data Sheet D13804EJ1V0DS00
3
µ
PA1814
R
DS(on)
- Drain to Source On-state Resistance - mΩ
35
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
GS
=
−4.0
V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
V
GS
=
−4.5
V
30
T
A
= 125˚C
25
75˚C
20
25˚C
−25
˚C
15
−0.01
−0.1
−1
−10
I
D
- Drain Current - A
−100
T
A
= 125˚C
75˚C
20
25˚C
−25
˚C
10
−
0.01
−
0.1
−
1
−
10
I
D
- Drain Current - A
−
100
R
DS (on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
V
GS
=
−10
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
I
D
=
−
3.5 A
V
GS
=
−4.0
V
25
−4.5
V
20
T
A
= 125˚C
15
75˚C
25˚C
10
−25
˚C
20
−10
V
15
10
−
0.01
5
−
0.1
−
1
−
10
−
100
5
−50
0
50
100
150
I
D
- Drain Current - A
Tch - Channel Temperature -
˚C
R
DS (on)
- Drain to Source On-state Resistance - mΩ
40
C
iss
, C
oss
, C
rss
- Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
I
D
=
−
3.5 A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
f = 1 MHz
V
GS
= 0 V
C
iss
1000
C
oss
C
rss
100
30
20
10
0
−
4
−
8
−
12
−
16
−
20
10
−1
−10
V
DS
- Drain Source Voltage - V
−100
V
GS
- Gate to Source Voltage - V
4
Data Sheet D13804EJ1V0DS00
µ
PA1814
SWITCHING CHARACTERISTICS
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
100
td
(off)
tr
tf
I
F
- Source to Drain Current - A
10
td
(on)
10
V
DD
=
−15
V
V
GS(on)
=
−10
V
R
G
= 10
Ω
−1
I
D
- Drain Current - A
−10
1
0.1
1
−0.1
0.01
0.4
0.6
0.8
1.0
1.2
V
F(S-D)
- Source to Drain Voltage - V
DYNAMIC INPUT CHARACTERISTICS
12
I
D
=
−7.0
A
V
GS
- Gate to Source Voltage - V
10
8
6
4
2
V
DD
=
−24
V
−15
V
−6
V
0
5
10
15
20
25
30
35
40
Q
g
- Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance - ˚C/W
Mounted on ceramic
substrate of 50 cm
2
x 1.1 mm
Single Pulse
100
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
1
PW - Pulse Width - s
10
100
1000
Data Sheet D13804EJ1V0DS00
5
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