DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1811
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1811 is a switching device which can be
driven directly by a 2.5-V power source.
The
µ
PA1811 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1, 5, 8 : Drain
2, 3, 6, 7: Source
4
: Gate
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
Can be driven by a 2.5- V power source
•
Low on-state resistance
R
DS(on)1
= 75 mΩ MAX. (V
GS
= –4.5 V, I
D
= –2.0 A)
R
DS(on)2
= 80 mΩ MAX. (V
GS
= –4.0 V, I
D
= –2.0 A)
R
DS(on)3
= 120 mΩ MAX. (V
GS
= –2.5 V, I
D
= –2.0 A)
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
µ
PA1811GR-9JG
0.8 MAX.
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
•
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
–20
−12/+6
±4.0
±16
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Body
Diode
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D11820EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1996, 2000
µ
PA1811
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
DS
= –20 V, V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –2.0 A
V
GS
= –4.5 V, I
D
= –2.0 A
V
GS
= –4.0 V, I
D
= –2.0 A
V
GS
= –2.5 V, I
D
= –2.0 A
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –10 V
I
D
= –2.0 A
V
GS(on)
= –4.0 V
R
G
= 5
Ω
V
DD
= –10 V
I
D
= –4.0 A
V
GS
= –4.0 V
I
F
= 4.0 A, V
GS
= 0 V
I
F
= 4.0 A, V
GS
= 0 V
di/dt = 100 A/
µ
S
–0.5
2.5
–0.9
6.8
42
46
73
1160
680
210
40
100
90
60
36
5
16
0.74
77
69
75
80
120
MIN.
TYP.
MAX.
–10
±10
–1.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
•
•
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
V
DD
I
D
(−)
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
V
GS
(−)
V
GS
Wave Form
I
G
=
−2
mA
V
GS
(on)
90 %
R
L
V
DD
0
10 %
PG.
90 %
90 %
50
Ω
I
D
0 10 %
10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D11820EJ1V0DS00
µ
PA1811
•
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
FORWARD BIAS SAFE OPERATING AREA
−100
I
D(pulse)
I
D(DC)
PW
10
ms
dT - Derating Factor - %
I
D
- Drain Current - A
80
−10
d
ite )
im .0 V
)
L
−
4
(on
S
R
D GS
=
V
(@
=1
ms
60
10
0m
s
−1
40
DC
20
−0.1
T
A
= 25 ˚C
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm
2
x 1.1 mm
0
30
60
90
120
150
−0.01
−0.1
T
A
- Ambient Temperature -
˚C
−10
−1
V
DS
- Drain to Source Voltage - V
−100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−16
Pulsed
V
GS
=
−10
V
−4.5
V
TRANSFER CHARACTERISTICS
−100
−10
−1
V
DS =
−10
V
I
D
- Drain Current - A
−12
−4.0
V
−8
I
D
- Drain Current - A
−0.1
−0.01
−4
T
A
= 125˚C
75˚C
25˚C
−
25˚C
0
−0.2
−0.4
−0.6
−0.8
−1
V
DS
- Drain to Source Voltage - V
−0.001
0
−1
−2
−3
V
GS
- Gate to Sorce Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
−1.4
−1.2
−1
−0.8
−0.6
−0.4
−50
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
=
−10
V
T
A
=
−25
C
25
C
75
C
125
C
V
DS
=
−10
V
I
D
=
−1
mA
10
1
0
50
100
150
0.1
−0.1
−1
−10
−100
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
Data Sheet D11820EJ1V0DS00
3
µ
PA1811
R
DS(on)
- Drain to Source On-State Resistance - mΩ
120
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
=
−2.5
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
V
GS
=
−4.0
V
100
T
A
= 125˚C
60
75˚C
25˚C
80
T
A
= 125˚C
75˚C
25˚C
40
60
−
25˚C
40
−0.1
−
25˚C
−1
−10
−100
20
−0.1
−1
−10
−100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
V
GS
=
−10
V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
I
D
=
−2.0
A
V
GS
=
−2.5
V
80
−4.0
V
40
T
A
= 125˚C
75˚C
60
30
25˚C
40
−10
V
20
−
25˚C
20
10
−0.1
−1
−10
−100
0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
R
DS (on)
- Drain to Source On-state Resistance - mΩ
150
Ciss, Coss, Crss - Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
I
D
=
−2.0
A
f = 1 MHz
V
GS
= 0 V
1000
C
iss
C
oss
C
rss
100
100
50
0
0
−
2
−
4
10
−1
−10
V
DS
- Drain to Source Voltage - V
−100
−
6
−
8
−
10
V
GS
- Gate to Source Voltage - V
4
Data Sheet D11820EJ1V0DS00
µ
PA1811
SWITCHING CHARACTERISTICS
1000
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
tr
100
tf
td
(off)
I
F
- Source to Drain Current - A
10
td
(on)
V
DD
=
−10
V
V
GS
(
on
) =
−4.0
V
R
G
= 5
Ω
−1
−10
I
D
- Drain Current - A
1
10
−0.1
0.1
0.4
V
GS
= 0 V
0.6
0.8
1
V
F(S-D)
- Source to Drain Voltage - V
1.2
DYNAMIC INPUT CHARACTERISTICS
−4
V
GS
- Gate to Source Voltage - V
I
D
=
−4.0
A
−3
V
DD
=
−10
V
−2
−1
0
0
10
20
30
Q
g
- Gate Charge - nC
40
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance - ˚C/W
Mounted on ceramic
substrate of 5000 mm
2
x 1.1 mm
Single Pulse
100
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
1
PW - Pulse Width - s
10
100
1000
Data Sheet D11820EJ1V0DS00
5
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