DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1809
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1809 is a switching device which can be
driven directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC Converters and power
management of notebook computers and so on.
8
PACKAGE DRAWING (Unit: mm)
5
1
: Drain1
1,2,3 :Source
2, 3
: Source1
4
:Gate
4
: Gate1
5
: Gate2
5,6,7,8 :Drain
6, 7
: Source2
8
: Drain2
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
4.0 V drive available
•
Low on-state resistance
R
DS(on)1
= 21 mΩ MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 29 mΩ MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)3
= 32 mΩ MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
•
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1809GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±8.0
±32
2.0
150
−55
to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Gate
Protection
Diode
Body
Diode
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16273EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA1809
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 24 V
V
GS
= 10 V
I
D
= 8.0 A
I
F
= 8.0 A, V
GS
= 0 V
I
F
= 8.0 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±18 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 4.0 A
V
GS
= 10 V, I
D
= 4.0 A
V
GS
= 4.5 V, I
D
= 4.0 A
V
GS
= 4.0 V, I
D
= 4.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 15 V, I
D
= 4.0 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
4.0
2.0
8.4
17
21.5
24
520
200
70
11.5
6.0
32.5
6.1
10
1.6
2.6
0.85
24
15
21
29
32
MIN.
TYP.
MAX.
1.0
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
PG.
R
G
V
DD
I
D
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
90%
90%
PG.
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16273EJ1V0DS
µ
PA1809
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
2.5
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
2.0
Mounted on Ceramic
Substrate of 5000 mm
2
x 1.1 mm
80
1.5
60
1.0
40
0.5
Mounted on FR-4 board
of 2500 mm
2
x 1.6 mm
0
0
25
50
75
100
125
150
175
20
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS(on)
Limited
(V
GS
= 10 V)
I
D(pulse)
I
D
- Drain Current - A
10
I
D(DC)
PW = 1 ms
1
DC
10 ms
100 ms
0.1
Single Pulse
Mounted on Ceramic
2
Substrate of 5000 mm x 1.1 mm
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch−A)
- Transient Thermal Resistance -
°C/W
Single Pulse
Mounted on FR-4 board
of 2500 mm
2
x 1.6 mm
125
°
C/W
100
10
Mounted on Ceramic
Substrate of 5000 mm
2
x 1.1 mm
62.5
°
C/W
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16273EJ1V0DS
3
µ
PA1809
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
32
V
GS
= 10 V
4.5 V
4.0 V
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
V
DS
= 10 V
10
I
D
- Drain Current - A
I
D
- Drain Current - A
24
1
16
0.1
T
A
= 125°C
75°C
25°C
−25°C
0.01
8
0.001
Pulsed
0
0
0.5
1.0
1.5
2.0
0.0001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
2.4
100
V
DS
= 10 V
I
D
= 1.0 mA
2.2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Pulsed
V
DS
= 10 V
V
GS(off)
- Gate Cut-off Voltage - V
2.0
10
1.8
T
A
=
−25°C
25°C
75°C
125°C
1.6
1
1.4
1.2
-50
0
50
100
150
0.1
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
50
Pulsed
I
D
= 4.0 A
40
V
GS
= 4.0 V
4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
50
Pulsed
I
D
= 4.0 A
40
30
30
20
20
10
10 V
10
0
-50
0
0
2
4
6
8
10
0
50
100
150
T
ch
- Channel Temperature -
°C
V
GS
- Gate to Source Voltage - V
4
Data Sheet G16273EJ1V0DS
µ
PA1809
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
50
Pulsed
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
30
V
GS
= 4.0 V
20
C
iss
, C
oss
, C
rss
- Capacitance - pF
40
C
iss
100
C
oss
4.5 V
10 V
C
rss
10
V
GS
= 0 V
f = 1.0 MHz
10
0.1
1
10
100
0
0.01
0.1
1
10
100
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
10000
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
1000
t
f
100
t
d(off)
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
V
GS
= 0 V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
I
F
- Diode Forward Current - A
10
1
t
d(on)
t
r
0.1
1
0.01
0.1
1
10
100
0.01
0.4
0.6
0.8
1.0
1.2
I
D
- Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
I
D
= 8.0 A
V
GS
- Gate to Source Voltage - V
8
V
DD
= 6.0 V
15 V
24 V
6
4
2
0
0
2
4
6
8
10
12
Q
G
- Gate Charge - nC
Data Sheet G16273EJ1V0DS
5
京公网安备 11010802033920号
EEWORLD
