DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1808
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1808 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC converters and power
management of notebook computers and so on.
8
PACKAGE DRAWING (Unit: mm)
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0 ±0.05
0.25
3°
+5°
–3°
0.1 ±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
•
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 17 mΩ MAX. (V
GS
= 10 V, I
D
= 5.0 A)
R
DS(on)2
= 23 mΩ MAX. (V
GS
= 4.5 V, I
D
= 5.0 A)
R
DS(on)3
= 26 mΩ MAX. (V
GS
= 4.0 V, I
D
= 5.0 A)
Built-in G-S protection diode against ESD
1
4
0.145 ±0.055
•
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.65
0.8 MAX.
0.1
µ
PA1808GR-9JG
Power TSSOP8
0.27
+0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
30
±20
±9.5
±38
2.0
150
−55
to +150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16250EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA1808
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 24 V
V
GS
= 10 V
I
D
= 9.5 A
I
F
= 9.5 A, V
GS
= 0 V
I
F
= 9.5 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±18
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A
V
GS
= 4.5 V, I
D
= 5.0 A
V
GS
= 4.0 V, I
D
= 5.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 15 V, I
D
= 5.0 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
5.0
1.9
10.5
13.5
17
19
660
280
100
13.5
5.6
38
7.9
13
1.8
3.7
0.84
27
19
17
23
26
MIN.
TYP.
MAX.
1.0
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
V
DD
I
D
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
V
GS
V
GS
Wave Form
I
G
= 2 mA
V
GS
90%
R
L
V
DD
0
10%
PG.
90%
90%
50
Ω
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16250EJ1V0DS
µ
PA1808
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
Mounted on FR-4 board
2
of 2500 mm x 1.6 mm
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
25
50
75
100
125
150
175
100
2
80
1.5
60
1
40
20
0.5
0
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
I
D(DC)
PW = 1 m s
10 ms
100 ms
T
A
- Ambient Temperature -
°C
10
I
D
- Drain Current - A
1
R
DS(on)
Lim ited
(V
GS
= 10 V)
0.1
Single pulse
M ounted on ceram ic substrate
2
of 5000 m m x 1.1 m m
0.1
1
10
100
DC
0.01
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
Single pulse
Mounted on FR-4 board of
2
2500 mm x 1.6 mm
125°C/W
100
10
Mounted on ceramic
2
substrate of 5000 mm x 1.1 mm
62.5°C/W
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16250EJ1V0DS
3
µ
PA1808
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
40
V
GS
= 10 V
4.5 V
4.0 V
30
FORWARD TRANSFER CHARACTERISTICS
10 0
10
1
0.1
0.01
0.001
0.000 1
V
D S
= 10 V
P u lse d
I
D
- Drain Current - A
20
10
Pulsed
0
0
0.4
0.8
1.2
1.6
2
1
1.5
2
2.5
3
3.5
4
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
T
A
= 125°C
75°C
25°C
−
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.4
2.2
2.0
1.8
1.6
1.4
1.2
-50
0
50
100
150
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1.0 mA
10
T
A
=
−25°C
25°C
75°C
125°C
1
0.1
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
I
D
= 5.0 A
Pulsed
30
V
GS
= 4.0 V
4.5 V
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
I
D
= 5 .0 A
P u ls e d
30
20
10 V
10
10
0
-50
0
50
100
150
0
0
2
4
6
8
10
T
ch
- Channel Temperature -
°C
V
GS
- Gate to Source Voltage - V
4
Data Sheet G16250EJ1V0DS
µ
PA1808
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
P u ls e d
30
1000
C
is s
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
G S
= 4 .0 V
4 .5 V
10 V
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
oss
100
C
rs s
20
10
0
0 .0 1
10
V
GS
= 0 V
f = 1 .0 M H z
0 .1
1
10
100
0 .1
1
10
100
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
10000
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
GS
= 0 V
Pulsed
10
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1000
t
f
100
t
d(off)
t
d(on)
10
t
r
I
F
- Diode Forward Current - A
V
D D
= 15 V
V
G S
= 10 V
R
G
= 10
Ω
1
0.1
1
0.01
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
I
D
- Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
I
D
= 9.5 A
V
GS
- Gate to Source Voltage - V
8
V
DD
= 24 V
15 V
6.0 V
6
4
2
0
0
5
10
15
Q
G
- Gate Charge - nC
Data Sheet G16250EJ1V0DS
5
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