DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1804
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
This product is a switching device which can be driven
directly by a 4.5 V power source.
The
µ
PA1804 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1, 5, 8 : Drain
2, 3, 6, 7: Source
4
: Gate
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
Can be driven by a 4.5 V power source
•
Low on-state resistance
R
DS(on)1
= 23 mΩ MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 32 mΩ MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
•
Built-in G-S protection diode against ESD
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
1
4
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
0.1
µ
PA1804GR-9JG
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
30
±20
±8.0
±32
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Body
Diode
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
2
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13868EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
©
1998,1999
µ
PA1804
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 4.0 A
V
GS
= 10 V, I
D
= 4.0 A
V
GS
= 4.5 V, I
D
= 4.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V
I
D
= 4.0 A
V
GS(on)
= 10 V
R
G
= 10
Ω
V
DS
= 24 V
I
D
= 8.0 A
V
GS
= 10 V
I
F
= 8.0 A, V
GS
= 0 V
I
F
= 8.0 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
1.0
3
2.1
8.7
18
24
761
258
99
24
83
46
29
13.5
2.4
3.7
0.86
27
16
23
32
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet D13868EJ1V0DS00
µ
PA1804
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
I
D
- Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
100
n)
(o
DS
GS
d
ite V)
Lim 10
=
I
D
(pulse)
PW
dT - Derating Factor - %
R
10
V
(@
I
D
(DC)
10
10
0m
s
DC
=1
ms
ms
60
1
40
0.1
T
A
= 25
˚C
Single Pulse
Mounted on Ceramic
Substrate of 50cm
2
x 1.1mm
20
0
30
60
120
90
T
A
- Ambient Temperature -
˚C
150
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
V
GS
= 10 V
25
I
D
- Drain Current - A
TRANSFER CHARACTERISTICS
100
10
I
D
- Drain Current - A
V
DS
= 10 V
20
15
10
5
4.5 V
1
0.1
0.01
0.001
T
A
=
−25˚C
25˚C
75˚C
125˚C
0.0001
0
0.2
0.4
0.6
0.8
1.0
0.00001
V
DS
- Drain to Source Voltage - V
1.0
4.0
2.0
3.0
V
GS
- Gate to Sorce Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
100
| y
fs
| - Forward Transfer Admittance - S
V
GS(off)
- Gate to Source Cut-off Voltage - V
2.5
V
DS
= 10 V
I
D
= 1 mA
V
DS
= 10 V
10
2.0
1
T
A
=
−25
˚C
25˚C
75˚C
125˚C
0.1
1.5
−50
0
50
100
150
T
ch
- Channel Temperature - ˚C
0.01
0.1
1
10
100
I
D
- Drain Current - A
Data Sheet D13868EJ1V0DS00
3
µ
PA1804
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
V
GS
= 4.5 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40
V
GS
= 10 V
40
T
A
= 125˚C
30
75˚C
25˚C
20
−25
˚C
30
T
A
= 125˚C
75˚C
20
25˚C
−25
˚C
10
0.01
10
0.01
0.1
1
10
I
D
- Drain Current - A
100
0.1
1
10
I
D
- Drain Current - A
100
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
I
D
= 4.0 A
V
GS
= 4.5 V
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
I
D
= 4.0 A
40
30
10 V
30
20
10
20
10
−50
0
50
100
150
0
4
8
12
16
20
Tch - Channel Temperature -
˚C
V
GS
- Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
1000
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
f = 1 MHz
V
GS
= 0 V
1000
C
iss
tr
100
td
(off)
td
(on)
10
V
DD
= 15 V
V
GS(on)
= 10V
1 R
G
= 10
Ω
0.1
tf
C
oss
100
C
rss
10
1
10
V
DS
- Drain Source Voltage - V
100
1
I
D
- Drain Current - A
10
4
Data Sheet D13868EJ1V0DS00
µ
PA1804
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
DYNAMIC INPUT CHARACTERISTICS
12
I
D
= 8.0 A
I
F
- Source to Drain Current - A
V
GS
- Gate to Source Voltage - V
10
8
6
4
2
10
V
DD
= 24 V
15 V
6V
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
V
F(S-D)
- Source to Drain Voltage - V
Q
g
- Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(ch-A)
- Transient Thermal Resistance - ˚C/W
Mounted on ceramic
Substrate of 50 cm
2
x 1.1 mm
Single Pulse
100
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
1
PW - Pulse Width - s
10
100
1000
Data Sheet D13868EJ1V0DS00
5
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