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UPA1730TP

Description
SWITCHING P-CHANNEL POWER MOSFET
File Size60KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1730TP Overview

SWITCHING P-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1730TP
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA1730TP which has a heat spreader is a P-Channel
MOS Field Effect Transistor designed for power management
applications of notebook computers and Li-ion battery protection
circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
1.49 ±0.21
1.44 TYP.
FEATURES
Low on-state resistance
R
DS(on)1
= 9.5 mΩ MAX. (V
GS
= –10 V, I
D
= –6.5 A)
R
DS(on)2
= 13.5 mΩ MAX. (V
GS
= –4.5 V, I
D
= –6.5 A)
R
DS(on)3
= 15.0 mΩ MAX. (V
GS
= –4.0 V, I
D
= –6.5 A)
Low C
iss
: C
iss
= 3800 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power HSOP8)
1
5.2
+0.17
–0.2
4
0.8 ±0.2
S
+0.10
–0.05
6.0 ±0.3
4.4 ±0.15
0.05 ±0.05
0.15
1.27 TYP.
0.40
1
+0.10
–0.05
0.10 S
0.12 M
2.0 ±0.2
2.9 MAX.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
8
9
4.1 MAX.
µ
PA1730TP
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (DC)
Note1
Note2
V
DSS
V
GSS
I
D(DC)1
I
D(DC)2
I
D(pulse)
P
T1
Note1
–30
!20
!28
!15
!100
40
3
150
–55 to +150
−15
22.5
V
V
A
A
A
W
W
°C
°C
A
mJ
Gate
Gate
Protection
Diode
Body
Diode
Drain
Drain Current (pulse)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
P
T2
T
ch
T
stg
I
AS
E
AS
1.1 ±0.2
4
EQUIVALENT CIRCUIT
Source
Notes 1.
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec.
2.
PW
10
µ
s, Duty Cycle
1%
3.
Starting T
ch
= 25°C, V
DD
=
−15
V, R
G
= 25
Ω,
V
GS
=
−20 →
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15935EJ1V0DS00 (1st edition)
Date Published March 2002 NS CP(K)
Printed in Japan
©
2002
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