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UPA1730

Description
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size61KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1730 Overview

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1730
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1730 is P-Channel MOS Field Effect Transis-
tor designed for power management applications of
notebook computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
Low on-resistance
1.44
R
DS(on)1
= 9.5 mΩ MAX. (V
GS
= –10 V, I
D
= –6.5 A)
1.8 MAX.
1
5.37 MAX.
4
6.0 ±0.3
4.4
+0.10
–0.05
0.8
R
DS(on)2
= 13.5 mΩ MAX. (V
GS
= –4.5 V, I
D
= –6.5 A)
5
R
DS(on)3
= 15.0 mΩ MAX. (V
GS
= –4.0 V, I
D
= –6.5 A)
Low C
iss
: C
iss
= 3800 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1730G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–30
V
V
A
A
W
°C
°C
Gate
Gate
Protection
Diode
#
20
#
13.0
#
52.0
Body
Diode
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
2.2
150
–55 to +150
Source
Notes 1.
PW
10
µ
s, Duty Cycle
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14284EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999

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