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RL203G

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15,
CategoryDiscrete semiconductor    diode   
File Size164KB,2 Pages
ManufacturerBytesonic Corporation
Download Datasheet Parametric Compare View All

RL203G Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15,

RL203G Parametric

Parameter NameAttribute value
MakerBytesonic Corporation
package instructionO-PALF-W2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
RL201G
THRU
RL207G
2.0 AMP GLASS PASSIVATED RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Glass passivated junction
2.0 Ampere
DO-15
.140(3.6)
.104(2.6)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.40 grams
* Both normal and Pb free product are available:
* Normal:80~95%Sn,5~20%Pb
* Pb free:99 Sn above can meet Rohs enviroment substance
directive request
.300(7.6)
.230(5.8)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 2.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
RL201G RL202G RL203G RL204G RL205G RL206G RL207G
UNITS
V
V
V
A
A
V
µA
µA
pF
C/W
C
50
35
50
100
70
100
200
140
200
400
280
400
2.0
70
1.1
5.0
50
20
40
-65
+175
600
420
600
800
560
800
1000
700
1000
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
210

RL203G Related Products

RL203G RL204G
Description Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-15,
package instruction O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V
JEDEC-95 code DO-15 DO-15
JESD-30 code O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 70 A 70 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 400 V
Maximum reverse current 5 µA 5 µA
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL

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