DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1722
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
DESCRIPTION
The
µ
PA1722 is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
•
Low on-resistance
1.8 MAX.
•
Small and surface mount package (Power SOP8)
0.05 MIN.
•
Built-in G-S protection diode
0.15
•
Low C
iss
: C
iss
= 980 pF TYP.
+0.10
–0.05
•
•
•
R
DS(on)1
= 21.0 mΩ MAX. (V
GS
= 10 V, I
D
= 4.5 A)
1.44
1
5.37 MAX.
4
6.0 ±0.3
4.4
0.8
R
DS(on)2
= 29.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 4.5 A)
R
DS(on)3
= 32.0 mΩ MAX. (V
GS
= 4.0 V, I
D
= 4.5 A)
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
•
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1722G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±9
±36
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Gate
Body
Diode
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm x 2.2 mm
Remark
2
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13890EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1998, 1999
µ
PA1722
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 4.5 A
V
GS
= 4.5 V, I
D
= 4.5 A
V
GS
= 4.0 V, I
D
= 4.5 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 4.5 A
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 4.5 A
V
GS(on)
= 10 V
V
DD
= 15 V
R
G
= 10
Ω
I
D
= 9 A
V
DD
= 24 V
V
GS
= 10 V
I
F
= 9 A, V
GS
= 0 V
I
F
= 9 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
980
320
125
20
80
60
30
20
2.3
6.0
0.84
35
45
1.5
5.0
MIN.
TYP.
14.0
19.0
22.0
2.0
9.2
10
±10
MAX.
21.0
29.0
32.0
2.5
UNIT
mΩ
mΩ
mΩ
V
S
•
Drain to Source On-state Resistance
•
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
•
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet G13890EJ1V0DS00
µ
PA1722
•
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
80
Mounted on ceramic
substrate of
1200 mm
2
×
2.2 mm
0
20
40
60
80
100 120 140 160
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
Remark
Mounted on ceramicsubstrate of 1200 mm
×
2.2 mm
2
s
10
0
µ
I
D
- Drain Current - A
R
DS(on)
Limited
(V
GS
=10V)
1m
10
I
D(DC)
s
m
10
s
10
Po
we
rD
iss
ip
0m
s
at
io
1
T
A
= 25 ˚C
Single Pulse
0.1
1
n
Li
m
ite
d
0.2
0.02
10
100
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 62.5˚C/W
10
1
0.1
0.01
100
µ
Mounted on ceramic substrate
of 1200 mm
2
x 2.2 mm
Single Pulse
T
A
= 25˚C
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G13890EJ1V0DS00
3
µ
PA1722
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
36
32
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 10 V
4.5 V
Pulsed
4.0 V
I
D
- Drain Current - A
10
I
D
- Drain Current - A
V
DS
= 10 V
6
8
28
24
20
16
12
8
4
1
T
A
= 150˚C
75˚C
25˚C
−
25˚C
0.1
0
2
4
0
0.4
0.8
1.2
1.6
2.0
V
GS
-
Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
|y
fs
| - Forward Transfer Admittance - S
100
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
90
80
70
60
50
40
30
20
10
0
5
10
15
I
D
= 9 A
4.5A
Pulsed
10
T
A
=
−25˚C
25˚C
75˚C
150˚C
1
0.1
0.01
V
DS
=10 V
Pulsed
0.1
1
10
100
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS(off)
- Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
60
V
GS
= 4.0 V
40
4.5 V
10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
5
V
DS
= 10 V
I
D
= 1 mA
4
3
2
1
20
0
0.1
1
10
100
0
−50
0
50
100
150
200
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet G13890EJ1V0DS00
µ
PA1722
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
40
30
20
V
GS
= 4.0 V
4.5 V
10 V
100
I
D
= 4.5 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
F
- Diode Forward Current - A
10
V
GS
= 10 V
0V
1
10
0
−50
0
50
100
150
0.1
0
Pulsed
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Diode - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
di/dt = 100A /
µ
s
V
GS
= 0 V
1000
C
iss
100
C
oss
100
C
rss
10
10
0.01
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
14
V
GS
30
V
DD
= 24 V
15 V
6V
12
10
8
6
10
I
D
= 9 A
12
16
20
24
28
0
32
4
2
0
V
GS
0
4
8
Q
G
- Gate Charge - nC
20
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
Data Sheet G13890EJ1V0DS00
5
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