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UPA1716: DescriptionSWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE; File Size57KB，8 Pages; ManufacturerNEC ( Renesas ); Websitehttps://www2.renesas.cn/zh-cn/

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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1716

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management

applications of notebook computers.

FEATURES

•

Low on-resistance

DS(on)1

= 12.5 mΩ TYP. (V

= –10 V, I

= –4 A)

DS(on)2

= 17.0 mΩ TYP. (V

= –4.5 V, I

= –4 A)

DS(on)3

= 19.0 mΩ TYP. (V

= –4.0 V, I

= –4 A)

•

Low C

iss

: C

iss

= 2100 pF TYP.

•

Built-in G-S protection diode

•

Small and surface mount package (Power SOP8)

PACKAGE DRAWING (Unit : mm)

1,2,3 ; Source

; Gate

5,6,7,8 ; Drain

5.37 Max.

+0.10

–0.05

6.0 ±0.3

4.4

0.8

0.15

ORDERING INFORMATION

PART NUMBER

PACKAGE

Power SOP8

1.8 Max.

1.44

0.05 Min.

0.5 ±0.2

0.10

1.27 0.78 Max.

0.40

+0.10

–0.05

PA1716G

0.12 M

ABSOLUTE MAXIMUM RATINGS (T

= 25°C, All terminals are connected.)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC)

Drain Current (pulse)

Note1

Note2

EQUIVARENT CIRCUIT

Drain

DSS

GSS

D(DC)

D(pulse)

stg

–30

°C

Gate

Protection

Diode

Gate

2.0

150

–55 to +150

Body

Diode

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Source

Notes 1.

≤

s, Duty Cycle

≤

1 %

Mounted on ceramic substrate of 1200 mm x 1.0 mm

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

G13727EJ1V0DS00 (1st edition)

Date Published March 1999 NS CP(K)

Printed in Japan

1998, 1999

UPA1716 Related Products

	UPA1716	UPA1716G
Description	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

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