DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1715
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
•
Low on-resistance
R
DS(on)1
= 8.5 mΩ TYP. (V
GS
= –10 V, I
D
= –6.0 A)
R
DS(on)2
= 11.0 mΩ TYP. (V
GS
= –4.5 V, I
D
= –6.0 A)
R
DS(on)3
= 12.0 mΩ TYP. (V
GS
= –4.0 V, I
D
= –6.0 A)
•
Low C
iss
: C
iss
= 3800 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
1
4
5.37 Max.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
0.15
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
1.8 Max.
1.44
0.05 Min.
0.5 ±0.2
0.10
1.27 0.78 Max.
0.40
+0.10
–0.05
µ
PA1715G
0.12 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVARENT CIRCUIT
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–30
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Gate
#
20
#
11
#
44
2.0
150
–55 to +150
Body
Diode
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm x 0.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13669EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
©
1998, 1999
µ
PA1715
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected.)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
=
–
10 V, I
D
=
–
6.0 A
V
GS
=
–
4.5 V, I
D
=
–
6.0 A
V
GS
=
–
4.0 V, I
D
=
–
6.0 A
V
DS
=
–
10 V, I
D
=
–
1 mA
V
DS
=
–
10 V, I
D
=
–
6.0 A
V
DS
=
–
30 V, V
GS
= 0 V
V
GS
=
MIN.
TYP.
8.5
11
12
MAX.
11.5
16
17.5
UNIT
mΩ
mΩ
mΩ
V
S
–
1.0
10
–
1.6
23
–
2.5
–
1
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
#
20 V, V
DS
= 0 V
3800
1200
500
40
240
230
160
70
9
17
0.8
53
57
#
10
V
DS
=
–
10 V
V
GS
= 0 V
f = 1 MHz
I
D
=
–
6.0 A
V
GS(on)
=
–
10 V
V
DD
=
–
15 V
R
G
= 10
Ω
I
D
=
–
11 A
V
DD
=
–
24 V
V
GS
=
–
10 V
I
F
= 11 A, V
GS
= 0 V
I
F
= 11 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
GS
V
GS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
I
G
= 2 mA
10 %
90 %
90 %
I
D
V
GS (on)
90 %
R
L
V
DD
PG.
R
G
R
G
= 10
Ω
0
I
D
V
DD
PG.
50
Ω
V
GS
0
τ
τ
=
1
µ
s
Duty Cycle
≤
1
%
D
Wave Form
I
0
10 %
t
d (on)
t
on
t
r
t
d (off)
t
off
10 %
t
f
2
Data Sheet G13669EJ1V0DS00
µ
PA1715
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
2.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
Mounted on ceramic
substrate of
1200mm
2
x 0.7mm
0
20
40
60
80
100 120 140 160
80
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
−100
I
D(pulse)
Remark
Mounted on ceramic substrate of
1m
s
I
D
- Drain Current - A
−10
I
D
(DC)
1200 mm x 0.7 mm
2
10
Po
m
10
we
rD
iss
ip
s
0m
s
−1
at
io
n
Li
m
T
A
= 25 ˚C
Single Pulse
−0.1
−0.1
−1
ite
d
−10
−100
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 62.5˚C
10
1
Mounted on ceramic
substrate of 1200 mm
2
x 0.7 mm
Single Pulse
0.1
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G13669EJ1V0DS00
3
µ
PA1715
FORWARD TRANSFER CHARACTERISTICS
−100
Pulsed
−50
T
A
=
−50˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
V
GS
=
−10
V
−4.5
V
−4
V
I
D
- Drain Current - A
−10
I
D
- Drain Current - A
−2.0
V
DS
=
−10
V
−3.0
−4.0
−40
−30
−20
−10
−1
−0.1
0
−1.0
0
−0.2
−0.4
−0.6
−0.8
V
GS
-
Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
|y
fs
| - Forward Transfer Admittance - S
10
T
A
=
−50˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
V
DS
=
−10
V
Pulsed
R
DS(on)
- Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
30
20
I
D
=
−11
A
−6
A
1
10
−0.1
−1
−10
−100
0
−5
−10
−15
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
20
Pulsed
−2.0
V
DS
=
−10
V
I
D
=
−1
mA
15
−1.5
V
GS
=
−4
V
−4.5
V
−1.0
10
−10
V
−0.5
5
−1
−10
I
D
- Drain Current - A
−100
0
−50
0
50
100
150
T
ch
- Channel Temperature - ˚C
4
Data Sheet G13669EJ1V0DS00
µ
PA1715
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
18
16
14
12
10
8
6
4
−50
0
50
100
I
D
=
−6
A
150
0
0.2
V
GS
=
−4
V
−4.5
V
−10
V
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
I
F
- Diode Forward Current - A
V
GS
=
−4.5
V
10
0V
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
T
ch
- Channel Temperature - ˚C
V
F
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
r
t
d(off)
t
f
100
t
d(on)
C
iss
1 000
C
oss
C
rss
100
10
V
DS
=
−15
V
V
GS
=
−10
V
R
G
= 10Ω
−10
−100
V
GS
= 0 V
f = 1 MHz
−0.1
−1
−10
−100
1
−0.1
−1
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE CURRENT
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
−30
V
DS
=
−24
V
−15
V
−6
V
V
GS
−12
−10
−8
−6
100
−20
10
−10
V
DS
0
10
20
30
40
50
60
70
−4
−2
0
−0.1
−1
−10
−100
I
F
- Diode Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
I
D
=
−11.0
A
Data Sheet G13669EJ1V0DS00
5
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