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UPA1703

Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size50KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1703 Overview

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
µ
PA1703
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transis-
tor designed for power management applications of
notebook computers.
8
5
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Super Low On-Resistance
R
DS(on)1
= 10.5 mΩ
R
DS(on)2
= 17 mΩ
• Low C
iss
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
MAX. (V
GS
= 4 V, I
D
= 5.0 A)
1
4
5.37 MAX.
+0.10
–0.05
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
C
iss
= 2180 pF TYP.
1.44
1.8 MAX.
6.0 ±0.3
4.4
0.8
• Built-in G-S Protection Diode
• Small and Surface Mount Package
(Power SOP8)
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, all terminals are connected)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Notes1
Notes2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±10
±40
2.0
150
−55
to
+150
V
V
A
A
W
°C
°C
Gate
Gate
Protection
Diode
Body
Diode
Drain
Total Power Dissipation (T
A
= 25
°C)
Channel Temperature
Storage Temperature
Notes 1.
2.
Source
PW
10
µ
s, Duty Cycle
1 %
Mounted on ceramic substrate of 1200 mm
2
×
0.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated
voltage may be applied to this device.
Document No. D11494EJ1V0DS00 (1st edition)
Date Published December 1996 N
Printed in Japan
©
1996

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