DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1476
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1476 is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
ORDERING INFORMATION
1.4
0.6 ±0.1
2.5
•
Easy mount by 0.1 inch of terminal interval.
•
High h
FE
for Darlington Transistor.
•
Surge Absorber (Zener Diode) built in.
10
2.54
1.4
0.5 ±0.1
Part Number
Package
10 Pin SIP
Quality Grade
Standard
1 2 3 4 5 6 7 8 9 10
µ
PA1476H
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
CONNECTION DIAGRAM
3
2
1
4
5
6
7
8
10
9
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T1
**
P
T2
***
T
J
100
±15
100
±15
8
±2
±3
0.2
3.5
28
150
V
V
V
A/unit
A/unit
A/unit
W
W
˚C
(B)
(C)
PIN No.
2, 4, 6, 8 : Base (B)
3, 5, 7, 9 : Collector (C)
: Emitter (E)
1, 10
R
1
R
2
(E)
.
R
1
= 10 kΩ
.
.
R
2
= 900
Ω
.
T
stg
–55 to +150 ˚C
*
PW
≤
300
µ
s, Duty Cycle
≤
10 %
**
4 Circuits, T
a
= 25 ˚C
***
4 Circuits, T
c
= 25 ˚C
The information in this document is subject to change without notice.
Document No. IC-3565
Date Published November 1994 P
Printed in Japan
©
MIN.
1994
µ
PA1476
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Collector Leakage Current
Emitter Leakage Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Turn On Time
Storage Time
Fall Time
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
MIN.
TYP.
MAX.
1.0
1.0
UNIT
TEST CONDITIONS
V
CB
= 75 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V, I
C
= 1 A
V
CE
= 2 V, I
C
= 2 A
I
C
= 1 A, I
B
= 1 mA
I
C
= 1 A, I
B
= 1 mA
I
C
= 1 A
I
B1
= –I
B2
= 2 mA
.
.
V
CC
= 50 V, R
L
= 50
Ω
.
.
See test circuit
µ
A
mA
—
—
*
*
2000
500
20000
V
CE(sat)
*
V
BE(sat)
*
t
on
t
stg
t
f
1
1.2
0.4
1.5
2
V
V
µ
s
µ
s
µ
s
*
PW
≤
350
µ
s, Duty Cycle
≤
2 % / pulsed
SWITCHING TIME TEST CIRCUIT
.
R
L
= 50
Ω
.
V
IN
I
C
T.U.T.
Base Current
Wave Form
.
V
CC
= 50 V
.
Collector
Current
Wave Form
t
on
90 %
I
C
10 %
t
stg
t
f
I
B1
I
B2
I
B1
I
B2
PW
.
PW = 50
µ
s
.
Duty Cycle
≤
2 %
.
V
BB
= –5 V
.
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
µ
PA1476
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
10
SAFE OPERATING AREA
dT - Percentage of Rated Current - %
100
I
C
- Collector Current - A
PW
I
C (pulse)
I
C (DC)
80
60
40
20
20
0
D
Lim issip
ite atio
d
n
=
10
0
s
S/b
L
µ
µ
s
im
ite
d
1
0
50
100
150
T
C
- Case Temperature - ˚C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
30
NEC
µ
PA1476
D
n
tio
pa
si
is
1
m
m
Li
d
ite
10
s
s
S/
b
m
Li
m
0.1
1
T
C
= 25 ˚C
Single Pulse
10
V
CE
- Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
4 Circuits Operation
ite
d
100
P
T
- Total Power Dissipation - W
P
T
- Total Power Dissipation - W
3 Circuits Operation
2 Circuits Operation
20
1 Circuit Operation
4
3
2
1
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
10
0
25
50
75
100
125
T
a
- Ambient Temperature - ˚C
150
0
25
50
75
100
125
T
C
- Case Temperature - ˚C
150
DC CURRENT GAIN vs. COLLECTOR CURRENT
10000
10
COLLECTOR SATURATION VOLTAGE
vs. COLLECTOR CURRENT
h
FE
- DC Current Gain
1000
˚C
50
˚C
1
=
75
5 ˚C
C
T
a
2
5˚
–2
V
CE (sat)
- Collector Saturation Voltage - V
1
T
a
= –25 ˚C
100
125 ˚C
75 ˚C
25 ˚C
10
0.01
V
CE
= 2.0 V
0.1
1
10
I
C
/I
B
= 1000
0.1
0.1
1
I
C
- Collector Current - A
–10
I
C
- Collector Current - A
3
µ
PA1476
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
10
V
BE (sat)
- Base Saturation Voltage - V
TRANSIENT THERMAL RESISTANCE
R
th (j-c)
- Transient Thermal Resistance - ˚C/W
100
V
CE
≤
10 V
10
T
a
= –25 ˚C
1
25 ˚C
125 ˚C
75 ˚C
1
I
C
/I
B
= 1000
0.1
0.1
1
I
C
- Collector Current - A
10
0.1
0.1
1
10
PW - Pulse Width - ms
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
2.0
µ
A
µ
A
µ
A
00
180
0
µ
A
2
16
SWITCHING CHARACTERISTICS
100
I
C
/I
B
= 500
t
on
- Turn On Time -
µ
s
t
stg
- storage Time -
µ
s
t
f
- Fall Time -
µ
s
0
1.6
I
C
- Collector Current - A
µ
A
140
µ
A
120
22
10
t
on
1.2
A
100
µ
0.8
I
B
= 80
µ
A
t
stg
1
t
f
0.4
0
1.0
2.0
3.0
4.0
V
CE
- Collector to Emitter Voltage - V
5.0
0.1
0.1
1
I
C
- Collector Current - A
10
4
µ
PA1476
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
5
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