DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1456
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1456 is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
MIN.
1.4
0.6 ±0.1
2.54
1.4
0.5 ±0.1
1 2 3 4 5 6 7 8 9 10
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
•
Easy mount by 0.1 inch of terminal interval.
•
High h
FE
for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
10
2.5
µ
PA1456H
CONNECTION DIAGRAM
3
2
1
4
5
6
7
8
10
9
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C(DC)
I
B(DC)
P
T1
**
P
T2
***
T
j
150
100
7
±5
0.5
3.5
28
150
V
V
V
A/unit
A/unit
A/unit
W
W
˚C
(B)
I
C(pulse)
*
±10
(C)
PIN No.
2, 4, 6, 8 : Base (B)
3, 5, 7, 9 : Collector (C)
: Emitter (E)
1, 10
R
1
R
2
(E)
.
R
1
= 3.0 kΩ
.
.
R
2
= 300
Ω
.
T
stg
–55 to +150 ˚C
*
PW
≤
300
µ
s, Duty Cycle
≤
10 %
**
4 Circuits, T
a
= 25 ˚C
***
4 Circuits, T
c
= 25 ˚C
The information in this document is subject to change without notice.
Document No. IC-3521
(O. D. No. IC-6340)
Date Published September 1994 P
Printed in Japan
©
1994
µ
PA1456
ELECTRICAL CHARACTERISTICS (T
a
= 25 ˚C)
CHARACTERISTIC
Collector Leakage Current
Emitter Leakage Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Turn On Time
Storage Time
Fall Time
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
MIN.
TYP.
MAX.
10
10
UNIT
TEST CONDITIONS
V
CB
= 100 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V, I
C
= 2 A
V
CE
= 2 V, I
C
= 4 A
I
C
= 2 A, I
B
= 2 mA
I
C
= 2 A, I
B
= 2 mA
I
C
= 2 A
I
B1
= –I
B2
= 2 mA
.
.
V
CC
= 50 V, R
L
= 25
Ω
.
.
See test circuit
µ
A
mA
—
—
*
*
2000
500
7000
3000
0.9
1.6
1
3
1
20000
V
CE(sat)
*
V
BE(sat)
*
t
on
t
stg
t
f
1.5
2
V
V
µ
s
µ
s
µ
s
*
PW
≤
350
µ
s, Duty Cycle
≤
2 % / pulsed
SWITCHING TIME TEST CIRCUIT
R
L
= 25
Ω
V
IN
I
C
T.U.T.
Base Current
Wave Form
.
V
CC
= 50 V
.
Collector
Current
Wave Form
t
on
90 %
I
C
10 %
t
stg
t
f
I
B1
I
B2
I
B1
I
B2
PW
.
PW = 50
µ
s
.
Duty Cycle
≤
2 %
.
V
BB
= –5 V
.
2
µ
PA1456
TYPICAL CHARACTERISTICS (T
a
= 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
10
dT - Percentage of Rated Current - %
PW
SAFE OPERATING AREA
100
I
C
- Collector Current - A
80
60
40
20
5
=
S/
2
1
0.5
D
Li issi
m pa
ite ti
d on
30
0
µ
s
s
1m s
bL
3 m
ms
10 ms
ted
50
imi
im
ite
S/
0.2
Single Pulse
0.1
0
50
100
150
T
C
- Case Temperature - ˚C
1
5
10
50
20
V
CE
- Collector to Emitter Voltage - V
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
30
P
T
- Total Power Dissipation - W
P
T
- Total Power Dissipation - W
NEC
µ
PA1456
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
20
1 Circuit Operation
4
3
2
1
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
10
0
25
50
75
100
125
T
a
- Ambient Temperature - ˚C
150
0
25
50
75
100
125
T
C
- Case Temperature - ˚C
150
DC CURRENT GAIN vs. COLLECTOR CURRENT
100000
V
CE (sat)
- Collector Saturation Voltage - V
V
CE
= 2.0 V
Pulse Test
10
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
I
C
= 1000·I
B
Pulse Test
h
FE
- DC Current Gain
10000
1000
C
5˚
12
5 ˚C
=
7
˚C
T
a
25
˚C
5
–2
1
T
a
= 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
0.1
0.1
100
10
0.01
0.1
1
I
C
- Collector Current - A
10
1
I
C
- Collector Current - A
–10
3
V
CEO
MAX.
ss
Di
ip
at
io
d
bL
n
Li
m
ite
d
µ
PA1456
TRANSIENT THERMAL RESISTANCE
R
th (j-c)
- Transient Thermal Resistance - ˚C/W
100
V
CE
≤
10 V
V
BE (sat)
- Base Saturation Voltage - V
10
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
I
C
= 1000·I
B
Pulse Test
10
1
1.0
T
a
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
0.1
0.1
1
10
PW - Pulse Width - ms
100
0.1
0.1
1
I
C
- Collector Current - A
10
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
5
2.0
4
1.
1.0
0.8
0.6
0.4
I
C
- Collector Current - A
4
3
2
I
B
= 0.2 mA
1
0
1
2
3
4
V
CE
- Collector to Emitter Voltage - V
5
4
µ
PA1456
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
5
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