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UPA1454

Description
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE
File Size40KB,6 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1454 Overview

NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1454
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1454 is NPN silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
10 MIN.
1.4
0.6 ±0.1
2.54
1.4
0.5 ±0.1
1 2 3 4 5 6 7 8 9 10
Easy mount by 0.1 inch of terminal interval.
High h
FE
. Low V
CE(sat)
.
h
FE
= 800 to 3200 (at I
C
= 1 A)
V
CE(sat)
= 1.0 V MAX. (at I
C
= 3 A)
10
2.5
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
µ
PA1454H
CONNECTION DIAGRAM
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
3
2
1
PIN No.
2, 4, 6, 8 : Base (B)
3, 5, 7, 9 : Collector (C)
1, 10
: Emitter (E)
4
5
6
7
8
10
9
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T1
**
P
T2
***
T
j
100
100
7
5
10
1.0
3.5
28
150
V
V
V
A/unit
A/unit
A/unit
W
W
˚C
T
stg
–55 to +150 ˚C
*
PW
300
µ
s, Duty Cycle
10 %
**
4 Circuits, T
a
= 25 ˚C
***
4 Circuits, T
c
= 25 ˚C
The information in this document is subject to change without notice.
Document No. IC-3520
Date Published September 1994 P
Printed in Japan
©
1994

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Description NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE
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