DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1436A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The
µ
PA1436A is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
26.8 MAX.
4.0
PACKAGE DIMENSION
(in millimeters)
FEATURES
•
•
•
•
Easy mount by 0.1 inch of terminal interval.
High h
FE
for Darlington Transistor.
High Speed Switching.
C-E Reverce Diode built in.
10
2.54
ORDERING INFORMATION
Part Number
Package
10 Pin SIP
Quality Grade
Standard
1.4
0.6 ±0.2
1.4
0.5 ±0.2
µ
PA1436AH
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
2
1
4
6
8
10
3
5
7
9
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 ˚C)
Collector to Base Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
(T
a
= 25 ˚C)
Total Power Dissipation
(T
c
= 25 ˚C)
Junction Temperature
Storage Temperature
**
4 Circuits
T
j
T
stg
150
–55 to +150
˚C
˚C
P
T2
**
28
W
V
CBO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T1
**
150
100
8
±3
±5
0.3
3.5
V
V
V
A/unit
A/unit
A/unit
W
(B)
Collector to Emitter Voltage V
CEO
(C)
R
1
R
2
(E)
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
..
R
1
= 5 kΩ
..
R
2
= 1.3 kΩ
*
PW
≤
350
µ
s, Duty Cycle
≤
2 %
The information in this document is subject to change without notice.
Document No. IC-3482
(O.D. No. IC-8705)
Date Published September 1994 P
Printed in Japan
©
10 MIN.
2.5
1994
µ
PA1436A
ELECTRICAL CHARACTERISTICS (T
a
= 25 ˚C)
CHARACTERISTIC
Collector Leakage Current
Emitter Leakage Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Turn On Time
Storage Time
Fall Time
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
MIN.
TYP.
MAX.
1
5
UNIT
TEST CONDITIONS
V
CB
= 100 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V, I
C
= 1.5 A
V
CE
= 2 V, I
C
= 3 A
I
C
= 1.5 A, I
B
= 1.5 mA
I
C
= 1.5 A, I
B
= 1.5 mA
I
C
= 1.5 A
I
B1
= –I
B2
= 3 mA
.
V
CC
= 50 V, R
L
= 33
Ω
.
See test circuit
µ
A
mA
—
—
*
*
2000
1000
1
1.8
0.3
1.5
0.4
20000
V
CE(sat)
*
V
BE(sat)
*
t
on
t
stg
t
f
1.5
2
V
V
µ
s
µ
s
µ
s
*
PW
≤
350
µ
s, Duty Cycle
≤
2 % /pulsed
SWITCHING TIME TEST CIRCUIT
R
L
= 33
Ω
V
IN
I
B1
I
B2
PW
PW = 50
µ
s
Duty Cycle
≤
2 %
V
BB
= –5 V
T.U.T.
V
CC
= 50 V
90 %
Collector Current
Wave Form
t
on
I
C
10 %
t
stg
t
f
I
C
Base Current
Wave Form
I
B1
I
B2
2
µ
PA1436A
TYPICAL CHARACTERISTICS (T
a
= 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
0.1
I
C(pulse)
MAX.
T
C
= 25 ˚C
Single Pulse
SAFE OPERATING AREA
PW
dT - Percentage of Rated Current - %
100
I
C(DC)
MAX.
50
80
I
C
- Collector Current - A
0.1
m
10
Di
s
m
ss
s
Lim ip
ite atio
n
d
=1
m
s
S/
bL
im
60
ite
Di
ss
ip
at
io
n
d
S/b
d
ite
Lim
Li
40
0.1
20
0.01
0
50
100
150
1
10
T
C
- Case Temperature - ˚C
100
V
CEO
MAX.
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
30
NEC
µ
PA1436AH
m
ite
d
1000
V
CE
- Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
4 Circuits
Operation
P
T
- Total Power Dissipation - W
P
T
- Total Power Dissipation - W
3 Circuits
Operation
20
2 Circuits
Operation
1 Circuit
Operation
10
4
4 Circuits Operation
3 Circuits Operation
3
2 Circuits Operation
1 Circuit Operation
2
1
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
a
- Ambient Temperature - ˚C
T
C
- Case Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
3
V
CE
= 2.0 V
Pulsed
400
µ
A
30
0
µ
A
3
0
25
µ
A
200
150
µ
A
µ
A
I
C
- Collector Current - A
I
C
- Collector Current - A
120
2
µ
A
2
I
B
= 100
µ
A
1
1
0
1
2
3
4
3
0
1
2
3
V
CE
- Collector to Emitter Voltage - V
V
BE
- Base to Emitter Voltage - V
3
µ
PA1436A
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
10
V
CE
= 2.0 V
Pulsed
V
CE(sat)
- Collector Saturation Voltage - V
I
C
/I
B
= 1000
Pulsed
DC CURRENT GAIN vs. COLLECTOR CURRENT
10000
h
FE
- DC Current Gain
1000
1
100
0.01
0.1
1
10
0.1
1
I
C
- Collector Current - A
10
I
C
- Collector Current - A
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
10
I
C
/I
B
= 1000
Pulsed
V
BE(sat)
- Base Saturation Voltage - V
t
f
, t
stg
, t
on
- Switching Time -
µ
s
10
TURN ON TIME. STORAGE TIME AND
FALL TIME vs. COLLECTOR CURRENT
t
stg
1
t
f
t
on
1
1
I
C
- Collector Current - A
10
0.1
1
I
C
- Collector Current - A
10
4
µ
PA1436A
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
5
京公网安备 11010802033920号
EEWORLD
