UNR412Y datasheet, PDF - EEWORLD Datasheet

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UNR412Y: DescriptionComposite Device - Transistors with built-in Resistor; CategoryDiscrete semiconductor The transistor; File Size139KB，7 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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UNR412Y Overview

Composite Device - Transistors with built-in Resistor

UNR412Y Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Panasonic
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 1.49
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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Transistors with built-in Resistor

UNR412x Series

(UN412x Series)

Silicon PNP epitaxial planar type

Unit: mm

For digital circuits

■

Features

•

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

•

New S type package, allowing supply with the radial taping

4.0

±0.2

2.0

±0.2

(0.8)

3.0

±0.2

■

Resistance by Part Number

•

UNR4121

UNR4122

UNR4123

UNR4124

UNR412X

UNR412Y

(UN4121)

(UN4122)

(UN4123)

(UN4124)

(UN412X)

(UN412Y)

)

2.2 kΩ

4.7 kΩ

10 kΩ

2.2 kΩ

0.27 kΩ

3.1 kΩ

)

2.2 kΩ

4.7 kΩ

10 kΩ

5 kΩ

4.6 kΩ

0.45

+0.20

–0.10

(2.5) (2.5)

0.45

+0.20

–0.10

0.7

±0.1

15.6

±0.5

(0.8)

0.75 max.

7.6

1: Emitter

2: Collector

3: Base

NS-B1 Package

■

Absolute Maximum Ratings

25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

Rating

−50

−500

300

150

−55

+150

Unit

°C

Internal Connection

■

Electrical Characteristics

25°C

3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

UNR412X

Collector-emitter cutoff current (Base open)

UNR412X

Emitter-base

UNR4121

EBO

= −6

V, I

CEO

= −50

V, I

Symbol

CBO

CEO

CBO

Conditions

= −10 µA,

= −2

mA, I

= −50

V, I

Min

−50

−1

−

0.1

−1

−

0.5

−5

−2

−1

µA

Typ

Max

Unit

µA

cutoff current UNR4122/412X/412Y

(Collector open) UNR4123/4124

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00019BED

UNR412Y Related Products

	UNR412Y	UNR4121	UNR4122	UNR412X	UNR4123	UNR4124
Description	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Panasonic	Panasonic	Panasonic	Panasonic	Panasonic	Panasonic
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 1.49	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO 18.52	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO 4.54
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50	40	50	20	60	60
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260	NOT SPECIFIED	260	260
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	10	10	NOT SPECIFIED	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Humidity sensitivity level	-	1	1	-	1	1
Terminal surface	-	TIN SILVER BISMUTH COPPER	TIN SILVER BISMUTH COPPER	-	TIN SILVER BISMUTH COPPER	TIN SILVER BISMUTH COPPER

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