Transistors with built-in Resistor
UNR411x Series
(UN411x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
New S type package, allowing supply with the radial taping
0.75 max.
4.0
±0.2
2.0
±0.2
(0.8)
3.0
±0.2
■
Resistance by Part Number
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR4110 (UN4110)
UNR4111 (UN4111)
UNR4112 (UN4112)
UNR4113 (UN4113)
UNR4114 (UN4114)
UNR4115 (UN4115)
UNR4116 (UN4116)
UNR4117 (UN4117)
UNR4118 (UN4118)
UNR4119 (UN4119)
UNR411D (UN411D)
UNR411E (UN411E)
UNR411F (UN411F)
UNR411H (UN411H)
UNR411L (UN411L)
UNR411M
UNR411N
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
0.45
+0.20
–0.10
(2.5) (2.5)
0.45
+0.20
–0.10
0.7
±0.1
15.6
±0.5
(0.8)
7.6
2
3
1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Internal Connection
R
1
B
R
2
E
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
300
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00018DED
1
UNR411x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR4110/4115/4116/4117
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
−
0.1
−
0.5
−
0.01
−
0.1
−
0.2
−
0.5
−1.0
−1.5
−2.0
h
FE
V
CE
= −10
V, I
C
= −5
mA
20
30
35
60
80
80
160
V
CE(sat)
V
OH
V
OL
I
C
= −10
mA, I
B
= −
0.3 mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
f
T
R
1
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
−30%
80
0.51
1.0
2.2
4.7
10
22
47
+30%
MHz
kΩ
−4.9
−
0.2
400
460
−
0.25
V
V
V
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR4113
(Collector open) UNR4112/4114/411D/
411E/411M/411N
UNR4111
UNR411F/411H
UNR4119
UNR4118/411L
Forward current UNR4118/411L
transfer ratio
UNR4119/411D/411F/411H
UNR4111
UNR4112/411E
UNR4113/4114/411M
UNR411N
UNR4110
*
/4115
*
/4116
*
/
4117
*
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR4113
UNR411D
UNR411E
Transition frequency
Input resistance UNR4118
UNR4119
UNR411H/411M
UNR4116/411F/411L/411N
UNR4111/4114/4115
UNR4112/4117
UNR4110/4113/411D/411E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
2
SJH00018DED
UNR411x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance ratio UNR411M
UNR411N
UNR4118/4119
UNR4114
UNR411H
UNR411F
UNR4111/4112/4113/411L
UNR411E
UNR411D
0.08
0.17
0.17
0.37
0.8
1.70
3.7
Symbol
R
1
/R
2
Conditions
Min
Typ
0.047
0.1
0.10
0.21
0.22
0.47
1.0
2.14
4.7
0.12
0.25
0.27
0.57
1.2
2.60
5.7
Max
Unit
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
400
Total power dissipation P
T
(mW)
300
200
100
0
0
40
80
120
160
Ambient temperature T
a
(°C)
Characteristics charts of UNR4110
I
C
V
CE
T
a
=
25°C
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
–10 V
−120
−10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
200
25°C
−25°C
−40
100
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00018DED
3
UNR411x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
3
−10
2
Input voltage V
IN
(V)
−10
3
−10
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR4111
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
T
a
=
25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
160
V
CE
= −10
V
T
a
=
75°C
−
0.9 mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−
0.8 mA
−
0.7 mA
−
0.6 mA
−10
25°C
120
−25°C
80
−80
−
0.5 mA
−
0.4 mA
−
0.3 mA
−1
T
a
=
75°C
25°C
−
0.1
−25°C
−40
−
0.2 mA
−
0.1 mA
40
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
−
0.01
−
0.1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00018DED
UNR411x Series
Characteristics charts of UNR4112
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
−
0.9mA
−
0.8mA
−
0.7mA
−
0.6mA
−
0.5mA
−80
−
0.4mA
−
0.3mA
−40
−
0.2mA
−
0.1mA
0
T
a
=
25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
−1
25°C
−
0.1
−25°C
T
a
= 75°C
T
a
= 75°C
200
25°C
−25°C
100
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
=
−5
V
T
a
= 25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR4113
I
C
V
CE
I
B
= −1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
−160
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
−2
−4
−6
−8
−10
−12
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−10
300
T
a
=
75°C
25°C
200
−25°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
100
0
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00018DED
5
PCB Design
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