UPD44321162GF-A50 datasheet, PDF

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UPD44321162GF-A50: DescriptionZBT SRAM, 2MX16, 3.2ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100; Categorystorage storage; File Size381KB，40 Pages; ManufacturerNEC Electronics

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UPD44321162GF-A50 Overview

ZBT SRAM, 2MX16, 3.2ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

UPD44321162GF-A50 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	NEC Electronics
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	3.2 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	33554432 bit
Memory IC Type	ZBT SRAM
memory width	16
Number of functions	1
Number of terminals	100
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.7 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm

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PRELIMINARY PRODUCT INFORMATION

MOS INTEGRATED CIRCUIT

PD44321162, 44321182, 44321322, 44321362

32M-BIT ZEROSB

SRAM

PIPELINED OPERATION

Description

The

PD44321162 is a 2,097,152-word by 16-bit, the

PD44321182 is a 2,097,152-word by 18-bit, the

PD44321322 is a 1,048,576-word by 32-bit and the

PD44321362 is a 1,048,576-word by 36-bit ZEROSB static

RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The

PD44321162,

PD44321182,

PD44321322 and

PD44321362 are optimized to eliminate dead cycles for read

to write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-

bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the

single clock input (CLK).

The

PD44321162,

PD44321182,

PD44321322 and

PD44321362 are suitable for applications which require

synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).

In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal

operation.

The

PD44321162,

PD44321182,

PD44321322 and

PD44321362 are packaged in 100-pin PLASTIC LQFP with

a 1.4 mm package thickness or 165-pin PLASTIC FBGA for high density and low capacitive loading.

Features

•

Low voltage core supply : V

= 3.3 ± 0.165V (-A44, -A50, -A60)

= 2.5 ± 0.125V (-C50, -C60)

•

Synchronous operation

•

100 percent bus utilization

•

Internally self-timed write control

•

Burst read / write : Interleaved burst and linear burst sequence

•

Fully registered inputs and outputs for pipelined operation

•

All registers triggered off positive clock edge

•

3.3V or 2.5V LVTTL Compatible : All inputs and outputs

•

Fast clock access time : 2.8 ns (225 MHz), 3.2 ns (200 MHz), 3.5 ns (167 MHz)

•

Asynchronous output enable : /G

•

Burst sequence selectable : MODE

•

Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

•

Separate byte write enable : /BW1 to /BW4 (

PD44321322 and

PD44321362)

/BW1 to /BW2 (

PD44321162 and

PD44321182)

•

Three chip enables for easy depth expansion

•

Common I/O using three state outputs

The information contained in this document is being issued in advance of the production cycle for the

device. The parameters for the device may change before final production or NEC Corporation, at its own

discretion, may withdraw the device prior to its production.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M16024EJ1V0PM00 (1st edition)

Date Published September 2002 NS CP(K)

Printed in Japan

2002

UPD44321162GF-A50 Related Products

	UPD44321162GF-A50	UPD44321162F1-A60-FQ2	UPD44321162F1-C60-FQ2	UPD44321162F1-A50-FQ2	UPD44321162F1-C50-FQ2	UPD44321162GF-A60	UPD44321162GF-C60	UPD44321162F1-A44-FQ2	UPD44321162GF-A44	UPD44321162GF-C50
Description	ZBT SRAM, 2MX16, 3.2ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100	ZBT SRAM, 2MX16, 3.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	ZBT SRAM, 2MX16, 3.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	ZBT SRAM, 2MX16, 3.2ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	ZBT SRAM, 2MX16, 3.2ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	ZBT SRAM, 2MX16, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100	ZBT SRAM, 2MX16, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100	ZBT SRAM, 2MX16, 2.8ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	ZBT SRAM, 2MX16, 2.8ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100	ZBT SRAM, 2MX16, 3.2ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	QFP	BGA	BGA	BGA	BGA	QFP	QFP	BGA	QFP	QFP
package instruction	LQFP,	BGA,	BGA,	BGA,	BGA,	LQFP,	LQFP,	BGA,	LQFP,	LQFP,
Contacts	100	165	165	165	165	100	100	165	100	100
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	3.2 ns	3.5 ns	3.5 ns	3.2 ns	3.2 ns	3.5 ns	3.5 ns	2.8 ns	2.8 ns	3.2 ns
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 code	R-PQFP-G100	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PQFP-G100	R-PQFP-G100	R-PBGA-B165	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
length	20 mm	17 mm	17 mm	17 mm	17 mm	20 mm	20 mm	17 mm	20 mm	20 mm
memory density	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	16	16	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of terminals	100	165	165	165	165	100	100	165	100	100
word count	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	BGA	BGA	BGA	BGA	LQFP	LQFP	BGA	LQFP	LQFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	3.465 V	3.465 V	2.625 V	3.465 V	2.625 V	3.465 V	2.625 V	3.465 V	3.465 V	2.625 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	2.375 V	3.135 V	2.375 V	3.135 V	2.375 V	3.135 V	3.135 V	2.375 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	2.5 V	3.3 V	2.5 V	3.3 V	2.5 V	3.3 V	3.3 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	BALL	BALL	BALL	BALL	GULL WING	GULL WING	BALL	GULL WING	GULL WING
Terminal pitch	0.65 mm	1 mm	1 mm	1 mm	1 mm	0.65 mm	0.65 mm	1 mm	0.65 mm	0.65 mm
Terminal location	QUAD	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	QUAD	BOTTOM	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	14 mm	15 mm	15 mm	15 mm	15 mm	14 mm	14 mm	15 mm	14 mm	14 mm
Maker	NEC Electronics	-	-	-	-	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics

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