PESD18VF1BSF
20 May 2015
Ultra low capacitance bidirectional ESD protection diode
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD)
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
•
•
•
•
Bidirectional ESD protection of one line
Ultra low diode capacitance C
d
= 0.28 pF
High reverse standoff voltage V
RWM
= 18 V
ESD protection up to ±10 kV according to IEC 61000-4-2
3. Applications
•
•
NFC antenna protection
Protection of high-speed and standard data lines with high signal levels
4. Quick reference data
Table 1.
Symbol
C
d
V
RWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; V
R
= 0 V
Min
-
-
Typ
0.28
-
Max
0.45
18
Unit
pF
V
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1
K2
cathode (diode 1)
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
sym045
2
Transparent
top view
DSN0603-2 (SOD962-2)
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NXP Semiconductors
PESD18VF1BSF
Ultra low capacitance bidirectional ESD protection diode
6. Ordering information
Table 3.
Ordering information
Package
Name
PESD18VF1BSF
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
Version
SOD962-2
Type number
7. Marking
Table 4.
Marking codes
Marking code
J
Type number
PESD18VF1BSF
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20 µs
[1]
Min
-
-45
-45
-65
Max
1
125
125
150
Unit
A
°C
°C
°C
ESD maximum ratings
electrostatic discharge voltage
IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
MIL-STD-883; human body model;
HBM
[1]
[2]
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
[2]
[2]
-
-
-
10
15
10
kV
kV
kV
PESD18VF1BSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
20 May 2015
2 / 11
NXP Semiconductors
PESD18VF1BSF
Ultra low capacitance bidirectional ESD protection diode
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
001aaa631
I
PP
100 %
90 %
e
- t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6.
Symbol
V
RWM
C
d
V
BR
V
CL
R
dyn
I
RM
Characteristics
Parameter
reverse standoff
voltage
diode capacitance
breakdown voltage
clamping voltage
dynamic resistance
reverse leakage
current
[1]
[2]
Conditions
Min
-
Typ
-
0.28
21
-
0.6
1
Max
18
0.45
-
16
-
30
Unit
V
pF
V
V
Ω
nA
f = 1 MHz; V
R
= 0 V
I
R
= 1 mA
I
PPM
= 1 A
I
R
= 5 A
V
R
= 18 V
[1]
[2]
-
19
-
-
-
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
PESD18VF1BSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
20 May 2015
3 / 11
NXP Semiconductors
PESD18VF1BSF
Ultra low capacitance bidirectional ESD protection diode
0.4
C
d
(pF)
0.35
aaa-013445
I
PPM
I
PP
0.30
-V
CL
-V
BR
-V
RWM
I
R
I
RM
-I
RM
-I
R
V
RWM
V
BR
V
CL
0.25
-
+
0.20
-20
-10
0
10
V
R
(V)
20
-I
PP
-I
PPM
006aab325
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
Fig. 3.
Diode capacitance as a function of reverse
voltage; typical values
25
I
(A)
20
Fig. 4.
V-I characteristics for a bidirectional ESD
protection diode
aaa-013446
15
10
5
0
0
10
20
V
CL
(V)
30
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 5.
Dynamic resistance
PESD18VF1BSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
20 May 2015
4 / 11
NXP Semiconductors
PESD18VF1BSF
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
Rd
Cs
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
50 Ω
IEC 61000-4-2 ed.2
C
s
= 150 pF; R
d
= 330 Ω
DUT
(DEVICE
UNDER
TEST)
10
V
(kV) 8
6
4
2
V
(kV) 0
-2
-4
2
-6
0
-2
-10
-8
-10
-10
0
10
20
30
40
50
t (ns)
60
70
0
10
20
30
40
50
t (ns)
60
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 6.
ESD clamping test setup and waveforms
80
aaa-013447
10
V
CL
(V)
-20
aaa-013448
V
CL
(V)
50
20
-50
-10
-10
10
30
50
t (ns)
70
-80
-10
10
30
50
t (ns)
70
Fig. 7.
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
Fig. 8.
Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
PESD18VF1BSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
20 May 2015
5 / 11
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