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UNR2212

Description
Silicon NPN epitaxial planar transistor
CategoryDiscrete semiconductor    The transistor   
File Size354KB,17 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UNR2212 Overview

Silicon NPN epitaxial planar transistor

UNR2212 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Transistors with built-in Resistor
UNR221x Series
(UN221x Series)
Silicon NPN epitaxial planar transistor
Unit: mm
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
Resistance by Part Number
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
UNR221D
UNR221E
UNR221F
UNR221K
UNR221L
UNR221M
UNR221N
UNR221T
UNR221V
UNR221Z
Marking Symbol (R
1
)
(UN2210)
8L
47 kΩ
(UN2211)
8A
10 kΩ
(UN2212)
8B
22 kΩ
(UN2213)
8C
47 kΩ
(UN2214)
8D
10 kΩ
(UN2215)
8E
10 kΩ
(UN2216)
8F
4.7 kΩ
(UN2217)
8H
22 kΩ
(UN2218)
8I
0.51 kΩ
(UN2219)
8K
1 kΩ
(UN221D)
8M
47 kΩ
(UN221E)
8N
47 kΩ
(UN221F)
8O
4.7 kΩ
(UN221K)
8P
10 kΩ
(UN221L)
8Q
4.7 kΩ
(UN221M) EL
2.2 kΩ
(UN221N)
EX
4.7 kΩ
(UN221T)
EZ
22 kΩ
(UN221V)
FD
2.2 kΩ
(UN221Z)
FF
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R
1
B
R
2
E
C
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
200
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00010CED
0 to 0.1
0.4
±0.2
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