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UNR111X

Description
Composite Device - Transistors with built-in Resistor
File Size283KB,14 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet View All

UNR111X Overview

Composite Device - Transistors with built-in Resistor

Transistors with built-in Resistor
UNR111x Series
(UN111x Series)
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
(0.4)
6.9
±0.1
(1.5)
(1.5)
3.5
±0.1
2.5
±0.1
(1.0)
(1.0)
2.0
±0.2
2.4
±0.2
1.0
±0.1
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
UNR111D
UNR111E
UNR111F
UNR111H
UNR111L
(UN1110)
(UN1111)
(UN1112)
(UN1113)
(UN1114)
(UN1115)
(UN1116)
(UN1117)
(UN1118)
(UN1119)
(UN111D)
(UN111E)
(UN111F)
(UN111H)
(UN111L)
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
3
(2.5)
2
(2.5)
1
1.25
±0.05
Resistance by Part Number
(0.85)
0.55
±0.1
0.45
±0.05
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
R
1
B
R
2
E
C
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
400
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003
SJH00001BED
4.1
±0.2
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R 0.9
R 0.7
4.5
±0.1
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