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JANS1N5314-1E3

Description
DIODE CURRENT REGULATOR DIODE, Current Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size191KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

JANS1N5314-1E3 Overview

DIODE CURRENT REGULATOR DIODE, Current Regulator Diode

JANS1N5314-1E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codeunknown
1N5283-1 thru 1N5314-1
CURRENT REGULATOR DIODES
Available on
commercial
versions
Qualified per MIL-PRF-19500/463
DESCRIPTION
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
The popular 1N5283-1 thru 1N5314-1 series of 0.5 watt current regulators provides a selection
from 0.22 mA to 4.7 mA in standard 10% tolerances. These devices regulate current over a
broad voltage range as a counter part offering to Zeners (that regulate voltage over a broad
current range) in similar size axial-leaded packages. The somewhat larger DO-7 packaging
option offers a double-plug internal bond connection with a larger active die element for its
unique function as a current limiter. Microsemi also offers numerous other Zener products to
meet higher and lower power voltage regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 1N5283 thru 1N5314.
High source impedance.
Internal metallurgical bond.
JAN, JANTX, JANTXV, and JANS qualification per MIL-PRF-19500/463 available.
Chips also available as JANHC and JANKC.
RoHS compliant versions available (commercial grade only).
DO-7 Package
Also available in:
DO-213AB Package
(surface mount)
1N5283UR-1 to 1N5314UR-1
APPLICATIONS / BENEFITS
Double-plug construction.
Regulates current over a broad operating voltage and temperature range.
Extensive selection from 0.22 mA to 4.7 mA.
Standard current tolerances are plus/minus 10%.
Flexible axial-lead mounting terminals.
Nonsensitive to ESD.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead
@ L = .375 in
Thermal Impedance
Steady-State Power Dissipation
@ T
L
= +50
o
C, L = 3/8”
(1)
Working Peak Voltage
Solder Pad Temperature @ 10 s max.
Notes:
1. Derate at 4mW/°C above +50 C.
o
Symbol
T
J
and T
STG
R
ӨJL
Z
ӨJX
P
D
V
WM
T
SP
Value
-65 to +175
250
25
500
100
260
Unit
C
C/W
O
C/W
mW
V
o
C
o
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0159, Rev. 2 (111541)
©2011 Microsemi Corporation
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