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UF3K

Description
Rectifier Diode, 1 Element, 3A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size62KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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UF3K Overview

Rectifier Diode, 1 Element, 3A, 800V V(RRM),

UF3K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
Maximum non-repetitive peak forward current100 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.075 µs
surface mountYES
BL
GALAXY ELECTRICAL
UF3A--- UF3M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
3.0
A
SURFACE MOUNT RECTIFIERS
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-214AB,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
DO-214AB(SMC)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
 
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF3A
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
L
=90
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
UF3B
UB
100
70
100
UF3D
UD
200
140
200
UF3G
UG
400
280
400
UF3J
UJ
600
420
600
UF3K
UK
800
560
800
UF3M
UM
1000
700
1000
UNITS
V
V
V
A
UA
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
3
.0
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
50
15
1.0
100.0
A
V
A
75
12
ns
pF
/W
Maximum instantaneous forw ard voltage at3.0 A
Maximum reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
1.4
10.0
200.0
1.7
15.0
- 55 ---- + 150
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
Document Number 0280019
BL
GALAXY ELECTRICAL
1.

UF3K Related Products

UF3K UF3D UF3G UF3A UF3B
Description Rectifier Diode, 1 Element, 3A, 800V V(RRM), Rectifier Diode, 1 Element, 3A, 200V V(RRM), Rectifier Diode, 1 Element, 3A, 400V V(RRM), Rectifier Diode, 1 Element, 3A, 50V V(RRM), Rectifier Diode, 1 Element, 3A, 100V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.7 V 1 V 1.4 V 1 V 1 V
Maximum non-repetitive peak forward current 100 A 100 A 100 A 100 A 100 A
Number of components 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 800 V 200 V 400 V 50 V 100 V
Maximum reverse recovery time 0.075 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES YES YES
Maker Galaxy Semi-Conductor Co., Ltd. - Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
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