Transistors with built-in Resistor
UNR92XXJ Series
(UN92XXJ Series)
Silicon NPN epitaxial planer type
For digital circuit
I
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
•
SS-mini type package, allowing automatic insertion through tape
packing.
1.60
+0.05
–0.03
1.00
±0.05
3
1.60
±0.05
0.85
+0.05
–0.03
(0.375)
0.10 max.
0.80
±0.05
Unit: mm
0.12
+0.03
–0.01
1
0.27
±0.02
2
(0.80)
(0.50)(0.50)
0 to 0.02
I
Resistance by Part Number
Marking symbol (R
1
)
•
UNR9210J (UN9210J) 8L
47 kΩ
•
UNR9211J (UN9211J) 8A
10 kΩ
•
UNR9212J (UN9212J) 8B
22 kΩ
•
UNR9213J (UN9213J) 8C
47 kΩ
•
UNR9214J (UN9214J) 8D
10 kΩ
•
UNR9215J (UN9215J) 8E
10 kΩ
4.7 kΩ
•
UNR9216J (UN9216J) 8F
•
UNR9217J (UN9217J) 8H
22 kΩ
•
UNR9218J (UN9218J) 8I
0.51 kΩ
•
UNR9219J (UN9219J) 8K
1 kΩ
•
UNR921AJ
8X
100 kΩ
•
UNR921BJ
8Y
100 kΩ
•
UNR921CJ
8Z
•
UNR921DJ (UN921DJ) 8M
47 kΩ
•
UNR921EJ (UN921EJ) 8N
47 kΩ
•
UNR921FJ (UN921FJ) 8O
4.7 kΩ
•
UNR921KJ (UN921KJ) 8P
10 kΩ
•
UNR921LJ (UN921LJ) 8Q
4.7 kΩ
•
UNR921MJ
EL
2.2 kΩ
•
UNR921NJ
EX
4.7 kΩ
•
UNR921TJ (UN921TJ) EZ
22 kΩ
•
UNR921VJ
FD
2.2 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
5°
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
0.70
+0.05
–0.03
SSMini3-F1 Package
Internal Connection
R
1
B
R
2
E
C
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
125
125
−55
to
+125
Unit
V
V
mA
mW
°C
°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2001
SJH00039AED
5°
1
UNR92XXJ Series
I
Electrical Characteristics
T
a
=
25°C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter
cutoff
current
UNR9211J
UNR9212J/9214J/921DJ/
921EJ/921MJ/921NJ/921TJ
UNR9213J/921AJ
UNR9215J/9216J/9217J/
9210J/921BJ
UNR921FJ/921KJ
UNR9219J
UNR9218J/921LJ/921CJ/921VJ
Collector to base voltage
Collector to emitter voltage
Forward UNR9211J
current
UNR9212J/921EJ
transfer
UNR9213J/9214J/921AJ/
ratio
921CJ/921MJ
UNR9215J/9216J/9217J/
9210J/921BJ
UNR9218J/921KJ/921LJ
UNR9219J/921DJ/921FJ
UNR921NJ/921TJ
UNR921VJ
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage
UNR9213J/921BJ/921KJ
UNR921DJ
UNR921EJ
UNR921AJ
Transition frequency
Input
resis-
tance
UNR9218J
UNR9219J
UNR921MJ/921VJ
UNR9216J/921FJ/921LJ/921NJ
UNR9211J/9214J/9215J/921KJ
UNR9212J/9217J/921TJ
UNR9213J/9210J/921DJ/921EJ
UNR921AJ/921BJ
f
T
R
1
V
CE(sat)
V
OH
V
OL
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
5 V, R
L
=
1 kΩ
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
−30%
150
0.51
1
2.2
4.7
10
22
47
100
+30%
MHz
kΩ
4.9
0.2
V
CBO
V
CEO
h
FE
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
50
50
35
60
80
160
20
30
80
6
400
20
0.25
V
V
V
460
I
EBO
Conditions
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
Min
Typ
Max
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
V
V
mA
Unit
µA
2
SJH00039AED
UNR92XXJ Series
I
Electrical Characteristics (continued)
T
a
=
25°C
Parameter
Resis-
tance
ratio
UNR9211J/9212J/9213J/921LJ
UNR9214J
UNR9218J/9219J
UNR921DJ
UNR921EJ
UNR921FJ
UNR921KJ
UNR921MJ
UNR921NJ
UNR921TJ
UNR921AJ/921VJ
Resistance between emitter to base UNR921CJ
R
2
−30%
Symbol
R
1
/R
2
Conditions
Min
0.8
0.17
0.08
3.7
1.7
0.37
1.7
Typ
1.0
0.21
0.1
4.7
2.14
0.47
2.13
0.047
0.1
0.47
1.0
47
+30%
kΩ
Max
1.2
0.25
0.12
5.7
2.6
0.57
2.6
Unit
Common characteristics chart
P
T
T
a
150
Total power dissipation P
T
(mW)
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
Ambient temperature T
a
(
°C
)
Characteristics chart of UNR9210J
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
60
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
100
30
10
3
1
T
a
=
75°C
0.3
25°C
0.1
0.03
0.01
0.1
−25°C
0.3
1
3
10
30
100
V
CE(sat)
I
C
I
C
/ I
B
=
10
400
350
h
FE
I
C
V
CE
=
10 V
Forward current transfer ratio h
FE
50
Collector current I
C
(mA)
300
T
a
=
75°C
250
25°C
200
150
100
50
0
−25°C
40
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
30
0.3 mA
20
10
0
0
2
4
6
8
10
12
1
3
10
30
100
300
1 000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00039AED
3
UNR92XXJ Series
C
ob
V
CB
6
I
O
V
IN
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10 000
3 000
V
O
=
5 V
T
a
=
25°C
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
Input voltage V
IN
(V)
1 000
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics chart of UNR9211J
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
160
140
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
100
30
10
3
1
0.3
0.1
−25˚C
0.03
0.01
0.1
25°C
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
Collector current I
C
(mA)
120
100
80
60
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
Forward current transfer ratio h
FE
300
T
a
=
75°C
200
25°C
100
−25°C
0.2 mA
40
20
0
T
a
=
75°C
0.1 mA
0
2
4
6
8
10
12
0.3
1
3
10
30
100
0
1
3
10
30
100
300
1 000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
6
I
O
V
IN
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10 000
3 000
V
O
=
5 V
T
a
=
25°C
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
Input voltage V
IN
(V)
1 000
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00039AED
UNR92XXJ Series
Characteristics chart of UNR9212J
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
160
T
a
=
25°C
140
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
100
80
0.3 mA
60
40
20
0
0.2 mA
V
CE(sat)
I
C
100
30
10
3
1
0.3
0.1
−25°C
0.03
0.01
0.1
0
h
FE
I
C
400
V
CE
=
10 V
I
C
/ I
B
=
10
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Forward current transfer ratio h
FE
300
T
a
=
75°C
200
25°C
−25°C
25°C
T
a
=
75°C
100
0.1 mA
0
2
4
6
8
10
12
0.3
1
3
10
30
100
1
3
10
30
100
300
1 000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
6
I
O
V
IN
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10 000
3 000
V
O
=
5 V
T
a
=
25°C
100
30
10
3
1
0.3
0.1
0.03
0.01
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
Input voltage V
IN
(V)
1 000
0.6
0.8
1.0
1.2
1.4
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics chart of UNR9213J
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
160
T
a
=
25°C
140
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
60
40
20
0
0.2 mA
0.3 mA
V
CE(sat)
I
C
100
30
I
C
/ I
B
=
10
400
350
h
FE
I
C
V
CE
=
10 V
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
100
10
3
1
0.3
25°C
0.1
0.03
0.01
0.1
−25°C
300
250
200
150
100
50
0
T
a
=
75°C
25°C
−25°C
T
a
=
75°C
0.1 mA
0
2
4
6
8
10
12
0.3
1
3
10
30
100
1
3
10
30
100
300
1 000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00039AED
5
Embedded System
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