Transistors with built-in Resistor
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Silicon NPN epitaxial planer transistor
For digital circuits
1.6±0.15
0.4
0.8±0.1
0.4
0.2
-0.05
0.15
-0.05
+0.1
Unit: mm
s
Features
1.6±0.1
1.0±0.1
0.5
q
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
s
Resistance by Part Number
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol (R
1
)
UN9211
8A
10kΩ
UN9212
8B
22kΩ
UN9213
8C
47kΩ
UN9214
8D
10kΩ
UN9215
8E
10kΩ
UN9216
8F
4.7kΩ
UN9217
8H
22kΩ
UN9218
8I
0.51kΩ
UN9219
8K
1kΩ
UN9210
8L
47kΩ
UN921D
8M
47kΩ
UN921E
8N
47kΩ
UN921F
8O
4.7kΩ
UN921K
8P
10kΩ
UN921L
8Q
4.7kΩ
UNR921M
EL
2.2kΩ
UNR921N
EX
4.7kΩ
UNR921AJ
8X
100kΩ
UNR921BJ
8Y
100kΩ
UNR921CJ
8Z
—
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
100kΩ
—
47kΩ
0 to 0.1
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
Unit: mm
1.60±0.05
0.80
0.80±0.05
0.425 0.425
0.80
1.00±0.05
1.60
–0.03
+0.05
0.50
0.50
+0.1
0.85
–0.03
+0.05
+0.03
0.12
–0.01
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
125
125
–55 to +125
Unit
V
V
mA
mW
˚C
˚C
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
Internal Connection
R1
0 to 0.1
C
B
R2
E
+0.05
0.70
–0.03
0.27±0.02
0.80
1
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
s
Electrical Characteristics
Parameter
Collector cutoff current
UN9211
UN9212/9214/921E/921D
Emitter
cutoff
current
UN9213/UNR921M/921N/UNR921AJ
UN9215/9216/9217/9210/UNR921BJ
UN921F/921K
UN9219
UN9218/921L/UNR921CJ
Collector to base voltage
Collector to emitter voltage
UN9211
UN9212/921E
Forward
current
transfer
ratio
UN9213/9214/921M/UNR921AJ/921CJ
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
I
EBO
V
EB
= 6V, I
C
= 0
0.01
1.0
1.5
2.0
V
CBO
V
CEO
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
50
50
35
60
80
V
CE
= 10V, I
C
= 5mA
160
30
20
80
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
OC
= 5V, V
B
= 3.5V, R
1
= 1kΩ
V
OL
V
CC
= 5V, V
B
= 10V, R
1
= 1kΩ
V
CC
= 5V, V
B
= 6V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 5V, R
L
= 1kΩ
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
10
22
47
R
1
(–30%)
4.7
0.51
1
100
(+30%)
kΩ
4.9
0.2
0.2
0.2
0.2
0.2
MHz
V
400
0.25
V
V
460
V
V
mA
Unit
µA
µA
UN9215*/9216*/9217*/9210*/UNR921BJ h
FE
UN921F/921D/9219
UN9218/921K/921L
UN921N
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
UN9213/921K/UNR921BJ
UN921D
UN921E
UNR921AJ
Transition frequency
UN9211/9214/9215/921K
UN9212/9217
Input
resis-
tance
UN9213/921D/921E/9210
UN9216/921F/921L/UNR921N
UN9218
UN9219/UNR921M
UNR921AJ/921BJ
* h
FE
rank classification (UN9215/9216/9217/9210)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
s
Electrical Characteristics (continued)
Parameter
UN9211/9212/9213/921L
UN9214
UN9218/9219
UN921D
Resis-
tance
ratio
UN921E
UN921F
UN921K
UN921M
UN921N
UNR921AJ
Resistance between Emitter to Base
UNR921CJ
R
2
R
1
/R
2
Symbol
(Ta=25˚C)
Conditions
min
0.8
0.17
0.08
typ
1.0
0.21
0.1
4.7
2.14
0. 47
2.13
0.047
0.1
1.0
–30%
47
30%
kΩ
max
1.2
0.25
0.12
Unit
3
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Common characteristics chart
P
T
— Ta
150
Total power dissipation P
T
(mW)
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN9211
I
C
— V
CE
160
140
I
B
=1.0mA
0.9mA
0.8mA
Ta=25˚C
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
120
100
80
60
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
100
–25˚C
0.2mA
40
20
0
0
2
4
6
8
10
12
25˚C
Ta=75˚C
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
UN1211/1212/1213/1214/1215/1216/1217/1218/
Transistors with built-in Resistor
1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UN9212
I
C
— V
CE
160
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
Ta=25˚C
140
I
B
=1.0mA
0.9mA
0.8mA
120
100
80
0.3mA
60
40
20
0
0
2
4
6
8
10
12
0.2mA
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
0.7mA
0.6mA
0.5mA
0.4mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
–25˚C
25˚C
Ta=75˚C
100
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN9213
I
C
— V
CE
160
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
400
Ta=25˚C
h
FE
— I
C
V
CE
=10V
Collector current I
C
(mA)
120
100
80
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.1
–25˚C
Ta=75˚C
Forward current transfer ratio h
FE
140
I
B
=1.0mA
350
300
250
200
150
100
50
0
Ta=75˚C
25˚C
–25˚C
60
40
20
0
0
2
4
6
8
10
12
0.2mA
0.1mA
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
5
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