FS4A - FS4M
4.0 Amp. Surface Mount Rectifiers
Pb
CASE:
SMC/DO-214AB
Voltage
50 V to 1000 V
Current
4.0 A
• For surface mounted application
• Glass passivated junction chip
• Low forward voltage drop
• High current capability
• Easy pick and place
• High surge current capability
• Plastic material used carriers Underwraiters
Laboratory Classification 94V-0
• High temperature soldering:
260 ºC / 10 seconds at terminals
MECHANICAL DATA
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16 mm tape EIA-STD RS-481
Weight: 0.21 gram
Dimensions in mm.
Maximum Ratings and Electrical Characteristics at 25 ºC
FS4A
V
RRM
V
RMS
V
DC
I
F(AV)
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
@ T
L
=75 °C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC Method)
Maximum Reverse Recovery Time From
I
F
=0.5 A; I
R
= 1 A; I
RR
= 0.25 A
FS4B
FS4D
FS4G
FS4J
FS4K
FS4M
50
35
50
100
70
100
200
140
200
400
280
400
4.0 A
100 A
2.5 µS
600
420
600
800
560
800
1000
700
1000
I
FSM
T
rr
T
j
T
stg
Operating Temperature Range
Storage Temperature Range
-55 to +150 °C
-55 to +150 °C
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
C
j
R
th (j-l)
R
th (j-a)
Maximum Instantaneous Forward Voltage @ 4.0 A
Maximum DC Reverse Current @ T
A
= 25 °C
at Rated DC Blocking Voltage @ T
A
=125°C
Typical Junction Capacitance at 1MHz
and reverse voltage of 4VDC
1.15 V
10 µA
250 µA
60 pF
13 °C/W
47 °C/W
Typical Thermal Resistance
(Note 1)
NOTES: 1. Measured on P.C. Board with 16mm x16mm Copper Pad Areas
Jan - 08
FS4
Rating And Charasterictic Curves
MAXIMUM FORWARD CURRENT DERATING
CURVE
TYPICAL FORWARD CHARACTERISTICS
I
F
, instantaneous forward current (A)
30
10
3
1
0.3
0.1
0.03
0.01
0.6
0.7
0.8
0.9
T
j
= 25 °C
PULSE WIDTH = 300 µs
2% DUTY CYCLE
I
F(AV)
, average forward current (A)
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
RESISTIVE OR
INDUCTIVE LOAD
P. C. BOARD MOUNTED ON 16mm
2
PAD AREAS
1.0
1.1
1.2
1.3
0
50 60 70 80 90 100 110 120 130 140 150
165
V
F
, forward voltage (V)
MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
Lead temperature (°C)
TYPICAL JUNCTION CAPACITANCE
100
I
FSM
, peak forward surge current (A)
200
Cj, junction capacitance (pF)
100
50
T
j
= 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
50
8.3 ms Single Half Sine Wave
JEDEC Method
T
j
= T
j
max
10
5
1
5
10
50
100
10
1
5
10
50
100
Number of cycles at 60 Hz
V
R
, reverse voltage (V)
I
R
, Instantaneous reverse current (µA)
TYPICAL REVERSE CHARACTERISTICS
100
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NON INDUCTIVE
10W
NON INDUCTIVE
trr
+0.5A
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
10
T
j
= 125 °C
(+)
50vDC
(APPROX)
(-)
DUT
0
-0.25A
1
T
j
= 25 °C
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
NOTES: 1. Rise Time = 7ns max. Input Impedance =
1 megohm 22 pf
2. Rise Time = 10 ns max. Sourse Impedance =
50 ohms
1cm
SET TIME BASE FOR
5/ 10ns/ cm
0.1
0
20
40
60
80
100
120
140
Percent of rated peak reverse voltage (%)
Jan - 08
Test/Measurement
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